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Part Details for IRF5305PBF by Infineon Technologies AG
Overview of IRF5305PBF by Infineon Technologies AG
- Distributor Offerings: (24 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF5305PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J7317
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Newark | P Channel Mosfet, -55V, 31A, To-220Ab, Channel Type:P Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:31A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF5305PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 7574 |
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$0.5390 / $1.4100 | Buy Now |
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DISTI #
IRF5305PBF-ND
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DigiKey | MOSFET P-CH 55V 31A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
39025 In Stock |
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$0.5184 / $1.3800 | Buy Now |
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DISTI #
IRF5305PBF
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Avnet Americas | Transistor MOSFET N-CH 55V 31A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRF5305PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 15335 |
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$0.4829 / $0.5863 | Buy Now |
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DISTI #
63J7317
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Avnet Americas | Transistor MOSFET N-CH 55V 31A 3-Pin TO-220AB Tube - Bulk (Alt: 63J7317) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 1344 Partner Stock |
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$0.6300 / $1.4400 | Buy Now |
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DISTI #
942-IRF5305PBF
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Mouser Electronics | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC RoHS: Compliant | 8918 |
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$0.5180 / $1.1600 | Buy Now |
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DISTI #
V79:2366_27167605
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Arrow Electronics | Trans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Date Code: 2207 | Americas - 365 |
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$0.4265 / $0.6859 | Buy Now |
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DISTI #
V99:2348_13890408
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Arrow Electronics | Trans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2224 | Americas - 175 |
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$0.4424 / $0.7135 | Buy Now |
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DISTI #
70016962
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RS | MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.06Ohm, ID -31A, TO-220AB, PD 110W, VGS +/-20V | Infineon IRF5305PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 121 Weeks, 0 Days Container: Bulk | 0 |
|
$1.1700 / $1.3800 | RFQ |
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Future Electronics | Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 11685Tube |
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$0.4450 / $0.5300 | Buy Now |
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Future Electronics | Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 270Tube |
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$0.4450 / $0.5450 | Buy Now |
Part Details for IRF5305PBF
IRF5305PBF CAD Models
IRF5305PBF Part Data Attributes:
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IRF5305PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF5305PBF
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF5305PBF
This table gives cross-reference parts and alternative options found for IRF5305PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5305PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF5305 | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRF5305PBF vs IRF5305 |
| IRF5305 | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF5305PBF vs IRF5305 |