Datasheets
FX30KMJ-06 by:

30A, 60V, 0.092ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FN, 3 PIN

Part Details for FX30KMJ-06 by Renesas Electronics Corporation

Overview of FX30KMJ-06 by Renesas Electronics Corporation

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Part Details for FX30KMJ-06

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FX30KMJ-06 Part Data Attributes:

FX30KMJ-06 Renesas Electronics Corporation
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FX30KMJ-06 Renesas Electronics Corporation 30A, 60V, 0.092ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FN, 3 PIN
Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code TO-220AB
Package Description TO-220FN, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 1999-01-01
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.092 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FX30KMJ-06

This table gives cross-reference parts and alternative options found for FX30KMJ-06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FX30KMJ-06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FX30KMJ-06 Power Field-Effect Transistor, 30A I(D), 60V, 0.092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric FX30KMJ-06 vs FX30KMJ-06
Part Number Description Manufacturer Compare
2SJ652 Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, FULL PACK-3 SANYO Semiconductor Co Ltd FX30KMJ-06 vs 2SJ652
MTP23P06VG 23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN Rochester Electronics LLC FX30KMJ-06 vs MTP23P06VG
2SJ504 20A, 60V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FM, 3 PIN Renesas Electronics Corporation FX30KMJ-06 vs 2SJ504
2SJ553(L) Power Field-Effect Transistor, 30A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 Hitachi Ltd FX30KMJ-06 vs 2SJ553(L)
2SJ504 Power Field-Effect Transistor, 0.095ohm, P-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN Hitachi Ltd FX30KMJ-06 vs 2SJ504
MTP30P06V 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC FX30KMJ-06 vs MTP30P06V
2SJ218 0.06ohm, POWER, FET, TO-3PFM, 3 PIN Renesas Electronics Corporation FX30KMJ-06 vs 2SJ218
IRF9541 19A, 80V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC FX30KMJ-06 vs IRF9541
SFP9510 3.6A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FX30KMJ-06 vs SFP9510
2SJ553(L) 30A, 60V, 0.055ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation FX30KMJ-06 vs 2SJ553(L)

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