Datasheets
2SJ553(L) by:

Power Field-Effect Transistor, 30A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3

Part Details for 2SJ553(L) by Hitachi Ltd

Overview of 2SJ553(L) by Hitachi Ltd

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Part Details for 2SJ553(L)

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2SJ553(L) Part Data Attributes:

2SJ553(L) Hitachi Ltd
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2SJ553(L) Hitachi Ltd Power Field-Effect Transistor, 30A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3
Part Life Cycle Code Transferred
Ihs Manufacturer HITACHI LTD
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SJ553(L)

This table gives cross-reference parts and alternative options found for 2SJ553(L). The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SJ553(L), but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SJ553(L) 30A, 60V, 0.055ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation 2SJ553(L) vs 2SJ553(L)
2SJ553L-E Pch Single Power Mosfet -60V -30A 37Mohm LDPAK(L)/To-262, LDPAK(L), /Tube Renesas Electronics Corporation 2SJ553(L) vs 2SJ553L-E
Part Number Description Manufacturer Compare
2SJ652 Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, FULL PACK-3 SANYO Semiconductor Co Ltd 2SJ553(L) vs 2SJ652
MTP23P06VG 23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN Rochester Electronics LLC 2SJ553(L) vs MTP23P06VG
2SJ504 20A, 60V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FM, 3 PIN Renesas Electronics Corporation 2SJ553(L) vs 2SJ504
2SJ504 Power Field-Effect Transistor, 0.095ohm, P-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN Hitachi Ltd 2SJ553(L) vs 2SJ504
MTP30P06V 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC 2SJ553(L) vs MTP30P06V
2SJ218 0.06ohm, POWER, FET, TO-3PFM, 3 PIN Renesas Electronics Corporation 2SJ553(L) vs 2SJ218
IRF9541 19A, 80V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC 2SJ553(L) vs IRF9541
SFP9510 3.6A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC 2SJ553(L) vs SFP9510
2SJ553(L) 30A, 60V, 0.055ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation 2SJ553(L) vs 2SJ553(L)
MTP23P06V 23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN Rochester Electronics LLC 2SJ553(L) vs MTP23P06V

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