Datasheets
2SK2522-01MR by: Fuji Electric Co Ltd

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220F, 3 PIN

Part Details for 2SK2522-01MR by Fuji Electric Co Ltd

Overview of 2SK2522-01MR by Fuji Electric Co Ltd

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Part Details for 2SK2522-01MR

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2SK2522-01MR Part Data Attributes:

2SK2522-01MR Fuji Electric Co Ltd
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2SK2522-01MR Fuji Electric Co Ltd Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220F, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJI ELECTRIC CO LTD
Part Package Code TO-220F15
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH VOLTAGE
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK2522-01MR

This table gives cross-reference parts and alternative options found for 2SK2522-01MR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2522-01MR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK445-200A TRANSISTOR 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, PLASTIC, FULL PACK-3, FET General Purpose Power NXP Semiconductors 2SK2522-01MR vs BUK445-200A
YTAF640 TRANSISTOR 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power Toshiba America Electronic Components 2SK2522-01MR vs YTAF640
IRFI640G Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier 2SK2522-01MR vs IRFI640G
IRFI640GPBF Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULLPACK-3 International Rectifier 2SK2522-01MR vs IRFI640GPBF
IRFI640GPBF Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3 Vishay Siliconix 2SK2522-01MR vs IRFI640GPBF
IRF640FI 10A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics 2SK2522-01MR vs IRF640FI
IRFS541 Power Field-Effect Transistor, 17A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor 2SK2522-01MR vs IRFS541
IRFS640 Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor 2SK2522-01MR vs IRFS640
STP19NB20FP 10A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN STMicroelectronics 2SK2522-01MR vs STP19NB20FP
Part Number Description Manufacturer Compare
IRFI640G Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier 2SK2522-01MR vs IRFI640G
IRFS541 Power Field-Effect Transistor, 17A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor 2SK2522-01MR vs IRFS541
IRFS640 Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor 2SK2522-01MR vs IRFS640
BUK445-200A TRANSISTOR 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, PLASTIC, FULL PACK-3, FET General Purpose Power NXP Semiconductors 2SK2522-01MR vs BUK445-200A
STP19NB20FP 10A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN STMicroelectronics 2SK2522-01MR vs STP19NB20FP
IRFI640GPBF Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3 Vishay Siliconix 2SK2522-01MR vs IRFI640GPBF
IRF640FI 10A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics 2SK2522-01MR vs IRF640FI
IRFI640GPBF Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULLPACK-3 International Rectifier 2SK2522-01MR vs IRFI640GPBF
YTAF640 TRANSISTOR 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power Toshiba America Electronic Components 2SK2522-01MR vs YTAF640

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