Part Details for BUK445-200A by NXP Semiconductors
Overview of BUK445-200A by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BUK445-200A
BUK445-200A CAD Models
BUK445-200A Part Data Attributes:
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BUK445-200A
NXP Semiconductors
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Datasheet
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BUK445-200A
NXP Semiconductors
TRANSISTOR 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, PLASTIC, FULL PACK-3, FET General Purpose Power
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SFM | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 7.6 A | |
Drain-source On Resistance-Max | 0.23 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 80 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 30 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 170 ns | |
Turn-on Time-Max (ton) | 90 ns |
Alternate Parts for BUK445-200A
This table gives cross-reference parts and alternative options found for BUK445-200A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK445-200A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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YTAF640 | TRANSISTOR 15 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | BUK445-200A vs YTAF640 |
IRFI640G | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | International Rectifier | BUK445-200A vs IRFI640G |
IRFI640GPBF | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULLPACK-3 | International Rectifier | BUK445-200A vs IRFI640GPBF |
IRFI640GPBF | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Siliconix | BUK445-200A vs IRFI640GPBF |
IRF640FI | 10A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | BUK445-200A vs IRF640FI |
IRFS541 | Power Field-Effect Transistor, 17A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | BUK445-200A vs IRFS541 |
IRFS640 | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | BUK445-200A vs IRFS640 |
STP19NB20FP | 10A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STMicroelectronics | BUK445-200A vs STP19NB20FP |