Part Details for 2SK2516-01L by Fuji Electric Co Ltd
Overview of 2SK2516-01L by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2SK2516-01L
2SK2516-01L CAD Models
2SK2516-01L Part Data Attributes:
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2SK2516-01L
Fuji Electric Co Ltd
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Datasheet
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2SK2516-01L
Fuji Electric Co Ltd
Power Field-Effect Transistor, 50A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | COLLMER SEMICONDUCTOR INC | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 80 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 500 ns | |
Turn-on Time-Max (ton) | 125 ns |
Alternate Parts for 2SK2516-01L
This table gives cross-reference parts and alternative options found for 2SK2516-01L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2516-01L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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H7N0310LD | 30A, 30V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | 2SK2516-01L vs H7N0310LD |
2SK2957(L) | 50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | 2SK2516-01L vs 2SK2957(L) |
2SK2688-01L | Power Field-Effect Transistor, 50A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | Fuji Electric Co Ltd | 2SK2516-01L vs 2SK2688-01L |
2SK2957L-E | 50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | 2SK2516-01L vs 2SK2957L-E |
2SK2807-01L | Power Field-Effect Transistor, 35A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TPAK-3 | Fuji Electric Co Ltd | 2SK2516-01L vs 2SK2807-01L |
2SK3295-S | 35A, 20V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN | Renesas Electronics Corporation | 2SK2516-01L vs 2SK3295-S |
H7N0311LD | 45A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | 2SK2516-01L vs H7N0311LD |
H7N0310LD | Power Field-Effect Transistor, 30A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Hitachi Ltd | 2SK2516-01L vs H7N0310LD |
2SK3296-S | Power Field-Effect Transistor, 35A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | NEC Electronics Group | 2SK2516-01L vs 2SK3296-S |
2SK2957L | 50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | 2SK2516-01L vs 2SK2957L |