Part Details for H7N0311LD by Renesas Electronics Corporation
Overview of H7N0311LD by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for H7N0311LD
H7N0311LD CAD Models
H7N0311LD Part Data Attributes:
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H7N0311LD
Renesas Electronics Corporation
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Datasheet
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H7N0311LD
Renesas Electronics Corporation
45A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
Package Description | LDPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 45 A | |
Drain-source On Resistance-Max | 0.016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for H7N0311LD
This table gives cross-reference parts and alternative options found for H7N0311LD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H7N0311LD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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H7N0310LD | Power Field-Effect Transistor, 30A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Hitachi Ltd | H7N0311LD vs H7N0310LD |
H7N0310LD | 30A, 30V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | H7N0311LD vs H7N0310LD |
2SK2957L | 50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | H7N0311LD vs 2SK2957L |
2SK2807-01L | Power Field-Effect Transistor, 35A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TPAK-3 | Fuji Electric Co Ltd | H7N0311LD vs 2SK2807-01L |
2SK3296-S | Power Field-Effect Transistor, 35A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | NEC Electronics Group | H7N0311LD vs 2SK3296-S |
2SK2516-01L | Power Field-Effect Transistor, 50A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | Fuji Electric Co Ltd | H7N0311LD vs 2SK2516-01L |
2SK3295-S | 35A, 20V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN | Renesas Electronics Corporation | H7N0311LD vs 2SK3295-S |
2SK2957(L) | Power Field-Effect Transistor, 50A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Hitachi Ltd | H7N0311LD vs 2SK2957(L) |
2SK3295-S | Power Field-Effect Transistor, 35A I(D), 20V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | NEC Electronics Group | H7N0311LD vs 2SK3295-S |
2SK3296-S | 35A, 20V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN | Renesas Electronics Corporation | H7N0311LD vs 2SK3296-S |