Part Details for PHM25NQ10T,518 by NXP Semiconductors
Overview of PHM25NQ10T,518 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
Part Details for PHM25NQ10T,518
PHM25NQ10T,518 CAD Models
PHM25NQ10T,518 Part Data Attributes
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PHM25NQ10T,518
NXP Semiconductors
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Datasheet
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PHM25NQ10T,518
NXP Semiconductors
PHM25NQ10T
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | SMALL OUTLINE, R-PDSO-N8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 30.7 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PHM25NQ10T,518
This table gives cross-reference parts and alternative options found for PHM25NQ10T,518. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHM25NQ10T,518, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PHM30NQ10T,518 | PHM30NQ10T | NXP Semiconductors | PHM25NQ10T,518 vs PHM30NQ10T,518 |
PSMN039-100YS | TRANSISTOR 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power | NXP Semiconductors | PHM25NQ10T,518 vs PSMN039-100YS |
PSMN020-100YS | TRANSISTOR 43 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power | NXP Semiconductors | PHM25NQ10T,518 vs PSMN020-100YS |
PH1955L | TRANSISTOR 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power | NXP Semiconductors | PHM25NQ10T,518 vs PH1955L |
PH1955L,115 | PH1955L - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin | Nexperia | PHM25NQ10T,518 vs PH1955L,115 |
PH1955L,115 | PH1955L - N-channel TrenchMOS logic level FET SOIC 4-Pin | NXP Semiconductors | PHM25NQ10T,518 vs PH1955L,115 |
PSMN8R5-60YS | TRANSISTOR 76 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power | NXP Semiconductors | PHM25NQ10T,518 vs PSMN8R5-60YS |
PSMN8R5-60YS | Power Field-Effect Transistor | Nexperia | PHM25NQ10T,518 vs PSMN8R5-60YS |
PH20100S,115 | PH20100S - N-channel TrenchMOS standard level FET SOIC 4-Pin | NXP Semiconductors | PHM25NQ10T,518 vs PH20100S,115 |
PSMN020-100YS | Power Field-Effect Transistor, 43A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | Nexperia | PHM25NQ10T,518 vs PSMN020-100YS |