Datasheets
PHM25NQ10T,518 by: NXP Semiconductors

PHM25NQ10T

Part Details for PHM25NQ10T,518 by NXP Semiconductors

Overview of PHM25NQ10T,518 by NXP Semiconductors

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Applications Education and Research Aerospace and Defense Agriculture Technology Robotics and Drones

Part Details for PHM25NQ10T,518

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PHM25NQ10T,518 Part Data Attributes

PHM25NQ10T,518 NXP Semiconductors
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PHM25NQ10T,518 NXP Semiconductors PHM25NQ10T
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-N8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 170 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 30.7 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PHM25NQ10T,518

This table gives cross-reference parts and alternative options found for PHM25NQ10T,518. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHM25NQ10T,518, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHM30NQ10T,518 PHM30NQ10T NXP Semiconductors PHM25NQ10T,518 vs PHM30NQ10T,518
PSMN039-100YS TRANSISTOR 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PHM25NQ10T,518 vs PSMN039-100YS
PSMN020-100YS TRANSISTOR 43 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PHM25NQ10T,518 vs PSMN020-100YS
PH1955L TRANSISTOR 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PHM25NQ10T,518 vs PH1955L
PH1955L,115 PH1955L - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin Nexperia PHM25NQ10T,518 vs PH1955L,115
PH1955L,115 PH1955L - N-channel TrenchMOS logic level FET SOIC 4-Pin NXP Semiconductors PHM25NQ10T,518 vs PH1955L,115
PSMN8R5-60YS TRANSISTOR 76 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PHM25NQ10T,518 vs PSMN8R5-60YS
PSMN8R5-60YS Power Field-Effect Transistor Nexperia PHM25NQ10T,518 vs PSMN8R5-60YS
PH20100S,115 PH20100S - N-channel TrenchMOS standard level FET SOIC 4-Pin NXP Semiconductors PHM25NQ10T,518 vs PH20100S,115
PSMN020-100YS Power Field-Effect Transistor, 43A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 Nexperia PHM25NQ10T,518 vs PSMN020-100YS

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