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PHM25NQ10T,518 vs PHM30NQ10T feature comparison

PHM25NQ10T,518 NXP Semiconductors

Buy Now Datasheet

PHM30NQ10T Philips Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS PHILIPS SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-N8 ,
Pin Count 8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 170 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 30.7 A 37.6 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
Number of Elements 1 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 2
Rohs Code No
JESD-609 Code e0
Power Dissipation-Max (Abs) 62.5 W
Terminal Finish Tin/Lead (Sn/Pb)
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

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