MV2101
vs
1N4786
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
KNOX SEMICONDUCTORS INC
AEROFLEX/MICROMETRICS
Package Description
O-LALF-W2
O-LALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
30 V
28 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Cap Tolerance
20%
20%
Diode Capacitance Ratio-Min
2.5
2.4
Diode Capacitance-Nom
6.8 pF
6.8 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
JEDEC-95 Code
DO-7
DO-7
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.4 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
450
15
Rep Pk Reverse Voltage-Max
30 V
Reverse Current-Max
2e-8 µA
Reverse Test Voltage
25 V
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Variable Capacitance Diode Classification
ABRUPT
ABRUPT
Base Number Matches
6
4
Pbfree Code
Compare MV2101 with alternatives
Compare 1N4786 with alternatives