JANTXV1N6461
vs
SA6.0AHE3/54
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Min
5.6 V
6.67 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
3 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/551
Rep Pk Reverse Voltage-Max
5 V
6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
6
2
Factory Lead Time
8 Weeks
Breakdown Voltage-Max
7.37 V
Breakdown Voltage-Nom
7.02 V
Clamping Voltage-Max
10.3 V
JEDEC-95 Code
DO-204AC
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Compare JANTXV1N6461 with alternatives
Compare SA6.0AHE3/54 with alternatives