JANTXV1N6461
vs
1N6461
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
SEMICON COMPONENTS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min
5.6 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
Number of Elements
1
Number of Terminals
2
Package Body Material
GLASS
Package Shape
ROUND
Package Style
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/551
Rep Pk Reverse Voltage-Max
5 V
5 V
Surface Mount
NO
NO
Technology
AVALANCHE
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
Terminal Position
AXIAL
Base Number Matches
6
9
Breakdown Voltage-Nom
5.6 V
Clamping Voltage-Max
9 V
Compare JANTXV1N6461 with alternatives
Compare 1N6461 with alternatives