IRG4BC20W-S vs APT30GL100BN feature comparison

IRG4BC20W-S Infineon Technologies AG

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APT30GL100BN Advanced Power Technology

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG ADVANCED POWER TECHNOLOGY INC
Package Description PLASTIC, D2PAK-3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 13 A 30 A
Collector-Emitter Voltage-Max 600 V 1000 V
Configuration SINGLE SINGLE
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 300 ns 40 ns
Turn-on Time-Nom (ton) 36 ns 20 ns
Base Number Matches 2 2
HTS Code 8541.29.00.95
Fall Time-Max (tf) 1000 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 147 W
Power Dissipation-Max (Abs) 147 W
Rise Time-Max (tr) 130 ns
Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 40 ns
VCEsat-Max 3 V

Compare IRG4BC20W-S with alternatives

Compare APT30GL100BN with alternatives