Part Details for IRFD112 by International Rectifier
Overview of IRFD112 by International Rectifier
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for IRFD112
IRFD112 CAD Models
IRFD112 Part Data Attributes
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IRFD112
International Rectifier
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Datasheet
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IRFD112
International Rectifier
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | DIP | |
Package Description | DIP-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 0.8 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T4 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for IRFD112
This table gives cross-reference parts and alternative options found for IRFD112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSS123-T | Small Signal Field-Effect Transistor | Nexperia | IRFD112 vs BSS123-T |
BFW12 | TRANSISTOR 10 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72, FET General Purpose Small Signal | NXP Semiconductors | IRFD112 vs BFW12 |
VP3203N3P007 | Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Supertex Inc | IRFD112 vs VP3203N3P007 |
TQ3001N7 | Small Signal Field-Effect Transistor, 1.6A I(D), 40V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14 | Supertex Inc | IRFD112 vs TQ3001N7 |
KSK30RBU | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN | Fairchild Semiconductor Corporation | IRFD112 vs KSK30RBU |
2N7008P007 | Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | IRFD112 vs 2N7008P007 |
2SK1581-T2B | Small Signal Field-Effect Transistor, 0.2A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN | NEC Electronics Group | IRFD112 vs 2SK1581-T2B |
2SK940 | TRANSISTOR 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92MOD, 3 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | IRFD112 vs 2SK940 |
SI1031R-T1-GE3 | Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN | Vishay Intertechnologies | IRFD112 vs SI1031R-T1-GE3 |
2SK937AQ | Small Signal Field-Effect Transistor, TO-92 | SANYO Electric Co Ltd | IRFD112 vs 2SK937AQ |