IRFD112
vs
BFW12
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
NXP SEMICONDUCTORS
|
Part Package Code |
DIP
|
|
Package Description |
DIP-4
|
CYLINDRICAL, O-MBCY-W3
|
Pin Count |
4
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
Drain Current-Max (ID) |
0.8 A
|
0.01 A
|
Drain-source On Resistance-Max |
0.8 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
JESD-30 Code |
R-PDIP-T4
|
O-MBCY-W3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
METAL
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
IN-LINE
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
1 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
THROUGH-HOLE
|
WIRE
|
Terminal Position |
DUAL
|
BOTTOM
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Case Connection |
|
SHIELD
|
DS Breakdown Voltage-Min |
|
30 V
|
Feedback Cap-Max (Crss) |
|
0.8 pF
|
JEDEC-95 Code |
|
TO-72
|
Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare IRFD112 with alternatives
Compare BFW12 with alternatives