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BSS123-T by:

Small Signal Field-Effect Transistor

Part Details for BSS123-T by Nexperia

Overview of BSS123-T by Nexperia

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for BSS123-T

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BSS123-T Part Data Attributes:

BSS123-T Nexperia
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BSS123-T Nexperia Small Signal Field-Effect Transistor
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.15 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.25 W
Power Dissipation-Max (Abs) 0.25 W
Reference Standard IEC-134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSS123-T

This table gives cross-reference parts and alternative options found for BSS123-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS123235 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123-T vs BSS123235
BSS123TRL TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123-T vs BSS123TRL
BSS123,215 BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin NXP Semiconductors BSS123-T vs BSS123,215
BSS123T/R Small Signal Field-Effect Transistor Nexperia BSS123-T vs BSS123T/R
BSS123T/R TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal NXP Semiconductors BSS123-T vs BSS123T/R
BSS123TRL13 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123-T vs BSS123TRL13
BSS123 150mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors BSS123-T vs BSS123
BSS123 Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia BSS123-T vs BSS123
BSS123,215 BSS123 - 100 V, N-channel Trench MOSFET@en-us TO-236 3-Pin Nexperia BSS123-T vs BSS123,215
Part Number Description Manufacturer Compare
2N7002T7-7 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Diodes Incorporated BSS123-T vs 2N7002T7-7
TP4859 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA Allegro MicroSystems LLC BSS123-T vs TP4859
BST70A TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal NXP Semiconductors BSS123-T vs BST70A
SI1031R-T1-GE3 Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN Vishay Intertechnologies BSS123-T vs SI1031R-T1-GE3
2SK940 TRANSISTOR 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92MOD, 3 PIN, FET General Purpose Small Signal Toshiba America Electronic Components BSS123-T vs 2SK940
VN10LPSTOB Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Diodes Incorporated BSS123-T vs VN10LPSTOB
2SK303-3-TA Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 SANYO Electric Co Ltd BSS123-T vs 2SK303-3-TA
ZVP3306AM1 Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 Diodes Incorporated BSS123-T vs ZVP3306AM1
PN4393-J22Z TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3, FET General Purpose Small Signal National Semiconductor Corporation BSS123-T vs PN4393-J22Z
2SK303-15-TB Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 SANYO Electric Co Ltd BSS123-T vs 2SK303-15-TB

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