Part Details for IRFD112 by Harris Semiconductor
Overview of IRFD112 by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFD112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFD112-ND
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DigiKey | SMALL SIGNAL N-CHANNEL MOSFET Min Qty: 807 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1371 In Stock |
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$0.3700 | Buy Now |
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Rochester Electronics | IRFD112 - Small Signal, 0.8A, 100V, N-Channel, MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1371 |
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$0.3191 / $0.3754 | Buy Now |
Part Details for IRFD112
IRFD112 CAD Models
IRFD112 Part Data Attributes
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IRFD112
Harris Semiconductor
Buy Now
Datasheet
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IRFD112
Harris Semiconductor
Small Signal Field-Effect Transistor, 0.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.8 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFD112
This table gives cross-reference parts and alternative options found for IRFD112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSS123-T | Small Signal Field-Effect Transistor | Nexperia | IRFD112 vs BSS123-T |
| BFW12 | TRANSISTOR 10 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72, FET General Purpose Small Signal | NXP Semiconductors | IRFD112 vs BFW12 |
| VP3203N3P007 | Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Supertex Inc | IRFD112 vs VP3203N3P007 |
| TQ3001N7 | Small Signal Field-Effect Transistor, 1.6A I(D), 40V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14 | Supertex Inc | IRFD112 vs TQ3001N7 |
| KSK30RBU | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN | Fairchild Semiconductor Corporation | IRFD112 vs KSK30RBU |
| 2N7008P007 | Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | IRFD112 vs 2N7008P007 |
| 2SK1581-T2B | Small Signal Field-Effect Transistor, 0.2A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN | NEC Electronics Group | IRFD112 vs 2SK1581-T2B |
| 2SK940 | TRANSISTOR 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92MOD, 3 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | IRFD112 vs 2SK940 |
| SI1031R-T1-GE3 | Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN | Vishay Intertechnologies | IRFD112 vs SI1031R-T1-GE3 |
| 2SK937AQ | Small Signal Field-Effect Transistor, TO-92 | SANYO Electric Co Ltd | IRFD112 vs 2SK937AQ |