IRFD112
vs
BSS123-T
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
NEXPERIA
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
0.8 A
|
0.15 A
|
| Drain-source On Resistance-Max |
0.8 Ω
|
6 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDIP-T3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
TIN
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| Date Of Intro |
|
2017-02-01
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| Feedback Cap-Max (Crss) |
|
10 pF
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation Ambient-Max |
|
0.25 W
|
| Reference Standard |
|
IEC-134
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare IRFD112 with alternatives
Compare BSS123-T with alternatives