IRFD112
vs
BFW12
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
SHIELD
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
100 V
|
30 V
|
| Drain Current-Max (ID) |
0.8 A
|
0.01 A
|
| Drain-source On Resistance-Max |
0.8 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| JESD-30 Code |
R-PDIP-T3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
IN-LINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Package Description |
|
CYLINDRICAL, O-MBCY-W3
|
| Feedback Cap-Max (Crss) |
|
0.8 pF
|
| JEDEC-95 Code |
|
TO-72
|
|
|
|
Compare IRFD112 with alternatives
Compare BFW12 with alternatives