Parametric results for: IRF840 under Power Field-Effect Transistors

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Manufacturer Part Number: irf840
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IRF840LCSPBF
Vishay Intertechnologies
$1.2096 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ AVALANCHE RATED 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 28 A SWITCHING SILICON S-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE MATTE TIN GULL WING SINGLE VISHAY INTERTECHNOLOGY INC SMALL OUTLINE, S-PSSO-G2 3 compliant EAR99 Vishay
IRF840APBF-BE3
Vishay Intertechnologies
$1.2216 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 8 A 850 mΩ 510 mJ 8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 32 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC unknown EAR99 Vishay
IRF840SPBF
Vishay Siliconix
$1.2312 Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ AVALANCHE RATED 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 32 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE VISHAY SILICONIX SMALL OUTLINE, R-PSSO-G2 4 compliant EAR99 Vishay D2PAK
IRF840HPBF
Vishay Intertechnologies
$1.2998 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 7.3 A 850 mΩ 175 mJ 14 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 17 A SWITCHING SILICON 80 ns 90 ns TO-220AB R-PSFM-T3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC unknown EAR99 Vishay
IRF840ASTRLPBF
Vishay Intertechnologies
$1.3316 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.1 W 32 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE VISHAY INTERTECHNOLOGY INC SMALL OUTLINE, R-PSSO-G2 3 compliant EAR99 Vishay
IRF840ASTRLPBF
Vishay Siliconix
$1.3923 Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 32 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE VISHAY SILICONIX SMALL OUTLINE, R-PSSO-G2 4 compliant EAR99 Vishay D2PAK
IRF840ASPBF
Vishay Intertechnologies
$1.4332 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.1 W 32 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE VISHAY INTERTECHNOLOGY INC SMALL OUTLINE, R-PSSO-G2 3 not_compliant EAR99 Vishay
IRF840PBF-BE3
Vishay Intertechnologies
$1.4635 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 8 A 850 mΩ AVALANCHE RATED 510 mJ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 32 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC FLANGE MOUNT, R-PSFM-T3 unknown EAR99 Vishay
IRF840ASPBF
Vishay Siliconix
$1.4957 Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 32 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE VISHAY SILICONIX SMALL OUTLINE, R-PSSO-G2 4 compliant EAR99 Vishay D2PAK
IRF840ALPBF
Vishay Intertechnologies
$1.5593 Yes Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 8 A 850 mΩ 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.1 W 32 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 Not Qualified 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC 3 compliant EAR99 Vishay TO-262AA