Filter Your Search
1 - 10 of 539,038 results
|
AP3983BMTR-G1
Diodes Incorporated
|
$0.2920 | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 1 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | ||||||||||||||||||||||||||||||||||||||||||||||
|
AP3983DP7-G1
Diodes Incorporated
|
$0.2961 | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | |||||||||||||||||||||||||||||||||||||||||||||||
|
AP3983CMTR-G1
Diodes Incorporated
|
$0.3144 | Yes | Obsolete | STANDARD SRAM | e3 | 260 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | |||||||||||||||||||||||||||||||||||||||||||||||||
|
23K256-I/P
Microchip Technology Inc
|
$0.5770 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | DIP | DIP-8 | 8 | ||||||||
|
23LC512-I/SN
Microchip Technology Inc
|
$0.6270 | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||||||
|
N25S830HAS22I
onsemi
|
$0.6522 | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1, (3 LINE) | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | ONSEMI | compliant | EAR99 | 8542.32.00.41 | onsemi | SOIC-8 Narrow Body | 0.150 INCH, GREEN, PLASTIC, SOIC-8 | 8 | 751AZ | ||||||
|
23K256T-I/SN
Microchip Technology Inc
|
$0.6527 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | |||||
|
23K640-I/SN
Microchip Technology Inc
|
$0.6555 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | 8 | ||||
|
IS62WV6416FBLL-45TLI-TR
Integrated Silicon Solution Inc
|
$0.6631 | Yes | Active | STANDARD SRAM | NOT SPECIFIED | NOT SPECIFIED | INTEGRATED SILICON SOLUTION INC | compliant | Integrated Silicon Solution Inc. | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61WV12816EFBLL-10TLI-TR
Integrated Silicon Solution Inc
|
$0.6794 | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 2.4 V | 35 µA | 3.6 V | 2.4 V | CMOS | R-PDSO-G44 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 |