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Select Parts | Part Number |
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AP3983BMTR-G1
Diodes Incorporated
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AP3983DP7-G1
Diodes Incorporated
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AP3983CMTR-G1
Diodes Incorporated
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23K256-I/P
Microchip Technology Inc
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23K256T-I/SN
Microchip Technology Inc
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23LC512-I/SN
Microchip Technology Inc
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N25S830HAS22I
onsemi
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23K640-I/SN
Microchip Technology Inc
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IS62WV6416FBLL-45TLI-TR
Integrated Silicon Solution Inc
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IS61WV12816EFBLL-10TLI-TR
Integrated Silicon Solution Inc
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Memory Density
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Memory Width | Organization |
Supply Voltage-Nom (Vsup)
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Access Time-Max
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Clock Frequency-Max (fCLK) |
Memory IC Type
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I/O Type
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Number of Functions | Number of Ports | Number of Words Code | Number of Words |
Operating Mode
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Output Characteristics
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Output Enable
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Parallel/Serial
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Standby Current-Max
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Standby Voltage-Min
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Supply Current-Max
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Supply Voltage-Max (Vsup)
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Supply Voltage-Min (Vsup)
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Technology |
Temperature Grade
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JESD-30 Code
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Qualification Status
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JESD-609 Code
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Screening Level
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Time@Peak Reflow Temperature-Max (s)
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Number of Terminals
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Package Body Material
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Package Code
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Package Equivalence Code
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Package Shape
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Package Style
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Surface Mount
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Terminal Finish
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Terminal Form
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Terminal Pitch
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Terminal Position
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Seated Height-Max
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Length
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Width
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Ihs Manufacturer
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Reach Compliance Code
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ECCN Code
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HTS Code
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Samacsys Manufacturer
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Part Package Code
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Package Description
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Pin Count
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Manufacturer Package Code
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Yes | Yes | Obsolete | STANDARD SRAM | e3 | 1 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | |||||||||||||||||||||||||||||||||||||||||||||
Yes | Yes | Obsolete | STANDARD SRAM | e3 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | ||||||||||||||||||||||||||||||||||||||||||||||
Yes | Obsolete | STANDARD SRAM | e3 | 260 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | ||||||||||||||||||||||||||||||||||||||||||||||||
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | DIP | DIP-8 | 8 | |||||||
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | ||||
Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | |||||||
Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1, (3 LINE) | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | ONSEMI | compliant | EAR99 | 8542.32.00.41 | onsemi | SOIC-8 Narrow Body | 0.150 INCH, GREEN, PLASTIC, SOIC-8 | 8 | 751AZ | |||||
Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | 8 | |||
Yes | Active | STANDARD SRAM | NOT SPECIFIED | NOT SPECIFIED | INTEGRATED SILICON SOLUTION INC | compliant | Integrated Silicon Solution Inc. | |||||||||||||||||||||||||||||||||||||||||||||||||||
Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 2.4 V | 35 µA | 3.6 V | 2.4 V | CMOS | R-PDSO-G44 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 |
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AP3983BMTR-G1
Diodes Incorporated
|
$0.2888 Buy | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 1 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | ||||||||||||||||||||||||||||||||||||||||||||||
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AP3983DP7-G1
Diodes Incorporated
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$0.2929 Buy | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | |||||||||||||||||||||||||||||||||||||||||||||||
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AP3983CMTR-G1
Diodes Incorporated
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$0.3114 Buy | Yes | Obsolete | STANDARD SRAM | e3 | 260 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | |||||||||||||||||||||||||||||||||||||||||||||||||
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23K256-I/P
Microchip Technology Inc
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$0.5770 Buy | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | DIP | DIP-8 | 8 | ||||||||
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23K256T-I/SN
Microchip Technology Inc
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$0.6104 Buy | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | |||||
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23LC512-I/SN
Microchip Technology Inc
|
$0.6270 Buy | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||||||
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N25S830HAS22I
onsemi
|
$0.6512 Buy | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1, (3 LINE) | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | ONSEMI | compliant | EAR99 | 8542.32.00.41 | onsemi | SOIC-8 Narrow Body | 0.150 INCH, GREEN, PLASTIC, SOIC-8 | 8 | 751AZ | ||||||
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23K640-I/SN
Microchip Technology Inc
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$0.6555 Buy | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | 8 | ||||
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IS62WV6416FBLL-45TLI-TR
Integrated Silicon Solution Inc
|
$0.6631 Buy | Yes | Active | STANDARD SRAM | NOT SPECIFIED | NOT SPECIFIED | INTEGRATED SILICON SOLUTION INC | compliant | Integrated Silicon Solution Inc. | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61WV12816EFBLL-10TLI-TR
Integrated Silicon Solution Inc
|
$0.6794 Buy | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 2.4 V | 35 µA | 3.6 V | 2.4 V | CMOS | R-PDSO-G44 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 |