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BAT18,215
NXP Semiconductors
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$0.0639 | Yes | Obsolete | 1 pF | 0.75 pF | 700 mΩ | SILICON | 35 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | 5 mA | 100 MHz | 20 V | Not Qualified | R-PDSO-G3 | e3 | TO-236AB | 1 | 125 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | PLASTIC, SMD, 3 PIN | 3 | SOT23 | compliant | EAR99 | 8541.10.00 | NXP | ||||||||||
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BA679-GS08
Vishay Intertechnologies
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$0.0688 | Yes | End Of Life | 0.5 pF | 50 Ω | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR | 1.5 mA | 100 MHz | ULTRA HIGH FREQUENCY | 4 µs | Not Qualified | O-LELF-R2 | e2 | DO-213AA | 1 | 125 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN SILVER | WRAP AROUND | END | VISHAY INTERTECHNOLOGY INC | ROHS COMPLIANT, GLASS, MINIMELF-2 | compliant | Vishay | ||||||||||||||
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BAR6702VH6327XTSA1
Infineon Technologies AG
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$0.0747 | Yes | Active | 0.9 pF | 250 mW | 1.8 Ω | SILICON | 150 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | L BAND | 700 ns | R-PDSO-F2 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-F2 | compliant | EAR99 | 8541.10.00.80 | Infineon | ||||||||||||||||
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BA885E6327
Infineon Technologies AG
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$0.0749 | Yes | Yes | Active | 0.4 pF | 0.26 pF | 7 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 1.5 mA | 100 MHz | MEDIUM FREQUENCY TO L BAND | 1.6 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | 260 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOT-23 | SOT-23, 3 PIN | 3 | compliant | EAR99 | 8541.10.00.80 | Infineon | |||||||||||
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BAR6303WE6327HTSA1
Infineon Technologies AG
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$0.0799 | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G2 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-G2 | compliant | EAR99 | 8541.10.00.80 | Infineon | ||||||||||||||||
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BAP50-04,215
NXP Semiconductors
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$0.0852 | Yes | Obsolete | 0.6 pF | 0.45 pF | 250 mW | 5 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 500 µA | 100 MHz | 1.05 µs | Not Qualified | R-PDSO-G3 | e3 | TO-236AB | 1 | 150 °C | -65 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | PLASTIC, SMD, SST3, 3 PIN | 3 | SOT23 | compliant | EAR99 | 8541.10.00 | NXP | |||||||||
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BAP50-02,115
NXP Semiconductors
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$0.1007 | Yes | Obsolete | 0.55 pF | 0.4 pF | 715 mW | 5 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | 500 µA | 100 MHz | 1.05 µs | Not Qualified | R-PDSO-F2 | e3 | 1 | 150 °C | -65 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | FLAT | DUAL | NXP SEMICONDUCTORS | SOD | PLASTIC, SC-79, 2 PIN | 2 | SOD523 | compliant | EAR99 | 8541.10.00 | NXP | |||||||||
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BAR9002ELE6327XTMA1
Infineon Technologies AG
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$0.1013 | Yes | Yes | Active | e4 | 1 | NOT SPECIFIED | NOT SPECIFIED | Gold (Au) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||||||||||||||||||||||||||||
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BAR6302VH6327XTSA1
Infineon Technologies AG
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$0.1031 | Yes | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-F2 | e3 | AEC-Q101 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | SC-79 | R-PDSO-F2 | 2 | compliant | EAR99 | 8541.10.00.80 | Infineon | |||||||||||
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BAP64-03,115
NXP Semiconductors
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$0.1046 | Yes | Obsolete | 0.35 pF | 0.52 pF | 500 mW | 1.35 Ω | SILICON | 175 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 1.55 µs | Not Qualified | R-PDSO-G2 | e3 | 1 | 150 °C | -65 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | SOD | PLASTIC, SMD, SC-76, 2 PIN | 2 | SOD323 | compliant | EAR99 | 8541.10.00 | NXP |