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JDV3S31CT
Toshiba America Electronic Components
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Check for Price | Obsolete | 10.35 pF | SILICON | 10 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 4.06 % | 2.13 | ULTRA HIGH FREQUENCY | Not Qualified | R-XBCC-N3 | 150 °C | CATHODE | 3 | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | TOSHIBA CORP | ULTRA SMALL, CST3, 1-1S1A, 3 PIN | 3 | unknown | ||||||||||||||||||||||||||||||||
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BA591,135
NXP Semiconductors
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Check for Price | Yes | Obsolete | 0.8 pF | VARIABLE CAPACITANCE DIODE | YES | 35 V | e3 | 1 | 260 | 30 | Tin (Sn) | NXP SEMICONDUCTORS | 2 | compliant | SOD | SOD323 | EAR99 | 8541.10.00 | NXP | ||||||||||||||||||||||||||||||||||||||
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SMST6004-2
MACOM
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Check for Price | Active | 1 A | 250 mW | SILICON NITRIDE | 2 V | RECTIFIER DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 V | 2 | SCHOTTKY | GENERAL PURPOSE | 1 | R-PDSO-G3 | 150 °C | -65 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | M/A-COM TECHNOLOGY SOLUTIONS INC | SOT-23, 3 PIN | compliant | EAR99 | 8541.10.00.80 | 2018-10-24 | |||||||||||||||||||||||||||||
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BAS40-T1S
Infineon Technologies AG
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Check for Price | Active | 120 mA | 850 mV | 10 µA | 250 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | PD-CASE | GENERAL PURPOSE | 170 mA | 1 | 40 V | Not Qualified | O-CXMW-G2 | e3 | 150 °C | -55 °C | 2 | CERAMIC, METAL-SEALED COFIRED | ROUND | MICROWAVE | MATTE TIN | GULL WING | UNSPECIFIED | INFINEON TECHNOLOGIES AG | O-CXMW-G2 | compliant | EAR99 | 8541.10.00.70 | |||||||||||||||||||||||
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GC9700-150A
Microsemi Corporation
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Check for Price | Yes | Transferred | 15 mA | 430 mV | 200 nA | SILICON | 70 V | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | SCHOTTKY | FAST RECOVERY | 1 | 50 V | R-PDSO-N2 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | MICROSEMI CORP | R-PDSO-N2 | compliant | EAR99 | 8541.10.00.70 | |||||||||||||||||||||||||||
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GC9700-150C
Microsemi Corporation
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Check for Price | Transferred | 15 mA | 430 mV | 200 nA | SILICON | 70 V | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | SCHOTTKY | FAST RECOVERY | 1 | 50 V | R-PDSO-N2 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.60 | |||||||||||||||||||||||||||||
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5082-2800
New Jersey Semiconductor Products Inc
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Check for Price | Active | 15 mA | 410 mV | 200 nA | 250 mW | SILICON | 70 V | RECTIFIER DIODE | SINGLE | NO | 1 | GENERAL PURPOSE | 1 | 50 V | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | 2018-09-21 | |||||||||||||||||||||||||||||
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GC9703-150D
Microsemi Corporation
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Check for Price | Transferred | 10 mA | 350 mV | 100 nA | SILICON | 8 V | RECTIFIER DIODE | SINGLE | YES | 1 V | 1 | SCHOTTKY | FAST RECOVERY | 1 | 1 V | R-PDSO-N2 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.60 | |||||||||||||||||||||||||||||
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BAT62E6327HTSA1
Infineon Technologies AG
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$0.0862 | Yes | Yes | Active | 20 mA | 1 V | 0.6 pF | 6 GHz | 10 µA | 100 mW | SILICON | 40 V | RECTIFIER DIODE | ANTI-PARALLEL CONNECTED, 2 ELEMENTS | YES | 2 | SCHOTTKY | C BAND | 40 V | LOW BARRIER | Not Qualified | R-PDSO-G4 | e3 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ANODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-G4 | compliant | EAR99 | 8541.10.00.60 | Infineon | ||||||||||||||||
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RB876WFHTL
ROHM Semiconductor
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$0.3751 | Yes | Active | 10 mA | 350 mV | 120 µA | SILICON | RECTIFIER DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 5 V | 2 | SCHOTTKY | HIGH RELIABILITY | EFFICIENCY | 1 | 5 V | R-PDSO-G3 | e1 | AEC-Q101 | 1 | 125 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN SILVER COPPER | GULL WING | DUAL | ROHM CO LTD | SC-75A, SOT-416, 3 PIN | compliant | EAR99 | 8541.10.00.70 | ROHM Semiconductor |