Memory
UPD4516821AG5-A10-9NF
Description: Synchronous DRAM, 2MX8, 6ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44

Overview of UPD4516821AG5-A10-9NF by NEC Electronics Group

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Available Datasheets

Part # Manufacturer Description Datasheet
P9030-0NTGI Renesas Electronics Corporation Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10
P9030-0NTGI8 Renesas Electronics Corporation Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10

Price & Stock for UPD4516821AG5-A10-9NF by NEC Electronics Group

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1363
RFQ
Quest Components 2M X 8 SYNCHRONOUS DRAM, 6 ns, 44 Pin Plastic SMT 1090
  • 1 $9.0000
  • 181 $4.9500
  • 405 $4.5000
$4.5000 / $9.0000 Buy Now
Quest Components 2M X 8 SYNCHRONOUS DRAM, 6 ns, 44 Pin Plastic SMT 996
  • 1 $9.0000
  • 557 $3.3000
  • 910 $3.1500
$3.1500 / $9.0000 Buy Now

CAD Models for UPD4516821AG5-A10-9NF by NEC Electronics Group
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Part Data Attributes for UPD4516821AG5-A10-9NF by NEC Electronics Group

UPD4516821AG5-A10-9NF
NEC Electronics Group
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NEC ELECTRONICS CORP
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
44
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
6 ns
JESD-30 Code
R-PDSO-G44
Length
18.41 mm
Memory Density
16777216 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
8
Number of Functions
1
Number of Ports
1
Number of Terminals
44
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
2MX8
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
MOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. UPD4516821AG5-A10-9NF
    NEC Electronics Group
    Synchronous DRAM, 2MX8, 6ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
    VS

Alternate Parts for UPD4516821AG5-A10-9NF

This table gives cross-reference parts and alternative options found for UPD4516821AG5-A10-9NF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD4516821AG5-A10-9NF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MB81F16822B-102FN Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 FUJITSU Semiconductor Limited UPD4516821AG5-A10-9NF vs MB81F16822B-102FN
UPD4516821AG5-A10-9NF Synchronous DRAM, 2MX8, 6ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Elpida Memory Inc UPD4516821AG5-A10-9NF vs UPD4516821AG5-A10-9NF
MT48LC2M8A1TGS-8B Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP-44 Micron Technology Inc UPD4516821AG5-A10-9NF vs MT48LC2M8A1TGS-8B
MT48LC2M8A1TG-8BS Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP-44 Micron Technology Inc UPD4516821AG5-A10-9NF vs MT48LC2M8A1TG-8BS
MT48LC2M8A2TGS-8B Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP-44 Micron Technology Inc UPD4516821AG5-A10-9NF vs MT48LC2M8A2TGS-8B
MB81F16822D-102LFN Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 FUJITSU Semiconductor Limited UPD4516821AG5-A10-9NF vs MB81F16822D-102LFN
K4S160822DT-F7 Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 Samsung Semiconductor UPD4516821AG5-A10-9NF vs K4S160822DT-F7
UPD4516821AG5-A80-9NF Synchronous DRAM, 2MX8, 6ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Elpida Memory Inc UPD4516821AG5-A10-9NF vs UPD4516821AG5-A80-9NF
HY57V168010CTC-10P Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc UPD4516821AG5-A10-9NF vs HY57V168010CTC-10P
MB81F16822B-75FN Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 FUJITSU Semiconductor Limited UPD4516821AG5-A10-9NF vs MB81F16822B-75FN
Part Number Description Manufacturer Compare
M5M4V16807ATP-10 Synchronous DRAM, 2MX8, 9ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 Mitsubishi Electric UPD4516821AG5-A10-9NF vs M5M4V16807ATP-10
TMS626812-15DGE 2MX8 SYNCHRONOUS DRAM, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Texas Instruments UPD4516821AG5-A10-9NF vs TMS626812-15DGE
UPD4516821G5-A83-PC Synchronous DRAM, 2MX8, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Elpida Memory Inc UPD4516821AG5-A10-9NF vs UPD4516821G5-A83-PC
HYB39S16800AT-8 Synchronous DRAM, 2MX8, 8ns, CMOS, PDSO44, 0.400 INCH, TSSOP2-44 Siemens UPD4516821AG5-A10-9NF vs HYB39S16800AT-8
HM5216805TT-10H Synchronous DRAM, 2MX8, 7.5ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Hitachi Ltd UPD4516821AG5-A10-9NF vs HM5216805TT-10H
HM5216805TT-12 Synchronous DRAM, 2MX8, 9ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Hitachi Ltd UPD4516821AG5-A10-9NF vs HM5216805TT-12
MB81117822E-125FN Synchronous DRAM, 2MX8, 7.5ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 FUJITSU Limited UPD4516821AG5-A10-9NF vs MB81117822E-125FN
M5M4V16807ART-15T Synchronous DRAM, 2MX8, 14ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, REVERSE, TSOP2-44 Mitsubishi Electric UPD4516821AG5-A10-9NF vs M5M4V16807ART-15T
MC16S084M3CS10 2MX8 SYNCHRONOUS DRAM, PDSO44, 0.400 INCH, 0.80 MM PITCH, TSOP-44 Motorola Mobility LLC UPD4516821AG5-A10-9NF vs MC16S084M3CS10
HYB39S16800T-10 Synchronous DRAM, 2MX8, 8ns, MOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 Infineon Technologies AG UPD4516821AG5-A10-9NF vs HYB39S16800T-10

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