Part Details for UPD4516821AG5-A10-9NF by Elpida Memory Inc
Overview of UPD4516821AG5-A10-9NF by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| P9030-0NTGI | Renesas Electronics Corporation | Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 | |
| P9030-0NTGI8 | Renesas Electronics Corporation | Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 |
Part Details for UPD4516821AG5-A10-9NF
UPD4516821AG5-A10-9NF CAD Models
UPD4516821AG5-A10-9NF Part Data Attributes
|
|
UPD4516821AG5-A10-9NF
Elpida Memory Inc
Buy Now
Datasheet
|
Compare Parts:
UPD4516821AG5-A10-9NF
Elpida Memory Inc
Synchronous DRAM, 2MX8, 6ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 44 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G44 | |
| Length | 18.32 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 44 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | MOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for UPD4516821AG5-A10-9NF
This table gives cross-reference parts and alternative options found for UPD4516821AG5-A10-9NF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD4516821AG5-A10-9NF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HM5216808CTT-80 | Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | Hitachi Ltd | UPD4516821AG5-A10-9NF vs HM5216808CTT-80 |
| MT48LC2M8A1TG-8BS | Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP-44 | Micron Technology Inc | UPD4516821AG5-A10-9NF vs MT48LC2M8A1TG-8BS |
| K4S160822DT-G7 | Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 | Samsung Semiconductor | UPD4516821AG5-A10-9NF vs K4S160822DT-G7 |
| UPD4516821AG5-A10-9NF | Synchronous DRAM, 2MX8, 6ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | NEC Electronics Group | UPD4516821AG5-A10-9NF vs UPD4516821AG5-A10-9NF |
| K4S160822DT-F7 | Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 | Samsung Semiconductor | UPD4516821AG5-A10-9NF vs K4S160822DT-F7 |
| HY57V168010DTC-8 | Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 | SK Hynix Inc | UPD4516821AG5-A10-9NF vs HY57V168010DTC-8 |
| MB81F16822B-75FN | Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | FUJITSU Limited | UPD4516821AG5-A10-9NF vs MB81F16822B-75FN |
| MB81F16822D-103LFN | Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | FUJITSU Semiconductor Limited | UPD4516821AG5-A10-9NF vs MB81F16822D-103LFN |
| UPD4516821AG5-A80L-9NF | Synchronous DRAM, 2MX8, 6ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | Elpida Memory Inc | UPD4516821AG5-A10-9NF vs UPD4516821AG5-A80L-9NF |
| HY57V168010CTC-10S | Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 | SK Hynix Inc | UPD4516821AG5-A10-9NF vs HY57V168010CTC-10S |