THMD51E01B70
Toshiba America Electronic Components
Description: IC 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM

Overview of THMD51E01B70 by Toshiba America Electronic Components

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Part Data Attributes for THMD51E01B70 by Toshiba America Electronic Components

THMD51E01B70
Toshiba America Electronic Components
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TOSHIBA CORP
Package Description
DIMM, DIMM184
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
0.75 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
143 MHz
I/O Type
COMMON
JESD-30 Code
R-XDMA-N184
Memory Density
4831838208 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
72
Number of Functions
1
Number of Ports
1
Number of Terminals
184
Number of Words
67108864 words
Number of Words Code
64000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
64MX72
Output Characteristics
3-STATE
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Equivalence Code
DIMM184
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Refresh Cycles
8192
Self Refresh
YES
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
DUAL
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    Toshiba America Electronic Components
    IC 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM
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Alternate Parts for THMD51E01B70

This table gives cross-reference parts and alternative options found for THMD51E01B70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THMD51E01B70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HYS72D64020HU-7-A DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 Infineon Technologies AG THMD51E01B70 vs HYS72D64020HU-7-A
Part Number Description Manufacturer Compare
M381L6423ETM-LC4 DDR DRAM Module, 64MX72, 0.65ns, CMOS, DIMM-184 Samsung Semiconductor THMD51E01B70 vs M381L6423ETM-LC4
HYMD264726D8-K DDR DRAM Module, 64MX8, 0.75ns, CMOS, DIMM-184 SK Hynix Inc THMD51E01B70 vs HYMD264726D8-K
HYS72D64301HBR-6-C DDR DRAM Module, 64MX72, 0.7ns, CMOS, GREEN, RDIMM-184 Qimonda AG THMD51E01B70 vs HYS72D64301HBR-6-C
MT18VDDT6472LAY-202XX DDR DRAM Module, 64MX72, 0.8ns, CMOS, MO-206, DIMM-184 Micron Technology Inc THMD51E01B70 vs MT18VDDT6472LAY-202XX
M381L6423AT0-LA2 DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor THMD51E01B70 vs M381L6423AT0-LA2
MT18VDDT6472DIG-202XX DDR DRAM Module, 64MX72, 0.8ns, CMOS, DIMM-184 Micron Technology Inc THMD51E01B70 vs MT18VDDT6472DIG-202XX
W3EG7262S202JD3MG DDR DRAM Module, 64MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation THMD51E01B70 vs W3EG7262S202JD3MG
M312L6420BT0-CA0 DDR DRAM Module, 64MX72, 0.8ns, CMOS, DIMM-184 Samsung Semiconductor THMD51E01B70 vs M312L6420BT0-CA0
W3EG7266S265D3S DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 Microsemi Corporation THMD51E01B70 vs W3EG7266S265D3S
MT18VDDT6472AY-335 DDR DRAM Module, 64MX72, 0.7ns, CMOS, PDMA184 Micron Technology Inc THMD51E01B70 vs MT18VDDT6472AY-335

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