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Transistors / Power Field-Effect Transistors / STD11NM50N
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STD11NM50N by: STMicroelectronics

N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a DPAK package

Part Details for STD11NM50N by STMicroelectronics

Overview of STD11NM50N by STMicroelectronics

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Price & Stock for STD11NM50N

Part # Distributor Description Stock Price Buy
DISTI # 497-10567-1-ND
DigiKey MOSFET N-CH 500V 8.5A DPAK Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $2.0700
  • 10 $1.7190
  • 100 $1.3680
  • 500 $1.1576
  • 1,000 $0.9822
  • 2,500 $0.9331
  • 5,000 $0.8980
$0.8980 / $2.0700 Buy Now
DISTI # STD11NM50N
Avnet Americas Trans MOSFET N-CH 500V 8.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD11NM50N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.0106
  • 5,000 $0.9898
  • 10,000 $0.9690
$0.9690 / $1.0106 Buy Now
DISTI # 511-STD11NM50N
Mouser Electronics MOSFET POWER MOSFET N-CH 500V RoHS: Compliant 2058
  • 1 $2.1200
  • 10 $1.7600
  • 100 $1.4000
  • 500 $1.1900
  • 1,000 $1.0100
  • 2,500 $0.9240
  • 5,000 $0.8970
$0.8970 / $2.1200 Buy Now
DISTI # V79:2366_17794965
Arrow Electronics Trans MOSFET N-CH 500V 8.5A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1217 Americas - 32
  • 1 $1.3807
  • 10 $1.2605
  • 100 $1.1138
  • 500 $0.9991
  • 1,000 $0.9145
$0.9145 / $1.3807 Buy Now
STMicroelectronics N-channel 500 V, 400 mOhm typ., 8.5 A MDmesh II Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 2058
  • 1 $1.5300
  • 10 $1.3300
  • 100 $1.1600
  • 250 $1.1600
  • 500 $1.0600
$1.0600 / $1.5300 Buy Now
Future Electronics N-Channel 500 V 0.47 Ω Surface Mount Mdmesh II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 2500
Reel
  • 2,500 $0.8950
$0.8950 Buy Now
Future Electronics N-Channel 500 V 0.47 Ω Surface Mount Mdmesh II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.8950
$0.8950 Buy Now
Future Electronics N-Channel 500 V 0.47 Ω Surface Mount Mdmesh II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.8950
$0.8950 Buy Now
DISTI # STD11NM50N
Avnet Americas Trans MOSFET N-CH 500V 8.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD11NM50N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.0106
  • 5,000 $0.9898
  • 10,000 $0.9690
$0.9690 / $1.0106 Buy Now
DISTI # STD11NM50N
Avnet Silica Trans MOSFET N-CH 500V 8.5A 3-Pin(2+Tab) DPAK T/R (Alt: STD11NM50N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
DISTI # STD11NM50N
EBV Elektronik Trans MOSFET N-CH 500V 8.5A 3-Pin(2+Tab) DPAK T/R (Alt: STD11NM50N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2098154
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $2.2228
  • 10 $2.0005
  • 25 $1.8894
  • 100 $1.6078
  • 500 $1.3263
  • 1,000 $1.2077
$1.2077 / $2.2228 Buy Now
DISTI # 2098154
Farnell MOSFET, N CH, 500V, 9A, DPAK RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 4 Days Container: Each 0
  • 1 $2.4936
  • 10 $1.8765
  • 100 $1.4987
  • 250 $1.4105
  • 500 $1.3098
  • 1,000 $1.0088
  • 5,000 $0.9710
$0.9710 / $2.4936 Buy Now

Part Details for STD11NM50N

STD11NM50N CAD Models

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STD11NM50N Part Data Attributes:

Parametric Data
STD11NM50N STMicroelectronics
Buy Now Datasheet
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STD11NM50N STMicroelectronics N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a DPAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 150 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.47 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD11NM50N

This table gives cross-reference parts and alternative options found for STD11NM50N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD11NM50N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
F10F6N Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd STD11NM50N vs F10F6N
NDP606BE 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments STD11NM50N vs NDP606BE
STP9NK65Z N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STMicroelectronics STD11NM50N vs STP9NK65Z
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation STD11NM50N vs IXFH12N100F
IPD90N06S306ATMA1 Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN Infineon Technologies AG STD11NM50N vs IPD90N06S306ATMA1
FQA30N40 Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Fairchild Semiconductor Corporation STD11NM50N vs FQA30N40
SSP10N60B Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STD11NM50N vs SSP10N60B
BUK9614-30 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors STD11NM50N vs BUK9614-30
FDP8878 Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation STD11NM50N vs FDP8878
FQPF6N80 Power Field-Effect Transistor, 3.3A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Fairchild Semiconductor Corporation STD11NM50N vs FQPF6N80

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