Part Details for SI7326DN-T1-E3 by Vishay Siliconix
Overview of SI7326DN-T1-E3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI7326DN-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7326DN-T1-E3CT-ND
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DigiKey | MOSFET N-CH 30V 6.5A PPAK 1212-8 Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$0.2875 / $0.8700 | Buy Now |
Part Details for SI7326DN-T1-E3
SI7326DN-T1-E3 CAD Models
SI7326DN-T1-E3 Part Data Attributes:
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SI7326DN-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7326DN-T1-E3
Vishay Siliconix
MOSFET N-CH 30V PWRPAK 1212-8
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Pbfree Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, S-XDSO-C5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 11 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 0.0195 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.5 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI7326DN-T1-E3
This table gives cross-reference parts and alternative options found for SI7326DN-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7326DN-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7326DN-T1-E3 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | Vishay Intertechnologies | SI7326DN-T1-E3 vs SI7326DN-T1-E3 |
EMB20N03VA | Power Field-Effect Transistor, 7A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-6 | Excelliance MOS Corporation | SI7326DN-T1-E3 vs EMB20N03VA |
SI7326DN-T1-GE3 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | Vishay Intertechnologies | SI7326DN-T1-E3 vs SI7326DN-T1-GE3 |