SI7326DN-T1-E3
vs
EMB20N03VA
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Not Recommended
|
Contact Manufacturer
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
EXCELLIANCE MOS CORP
|
| Package Description |
SMALL OUTLINE, S-XDSO-C5
|
SMALL OUTLINE, S-PDSO-N6
|
| Pin Count |
8
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
11 mJ
|
5 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
6.5 A
|
7 A
|
| Drain-source On Resistance-Max |
0.0195 Ω
|
0.02 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-XDSO-C5
|
S-PDSO-N6
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
3.5 W
|
|
| Pulsed Drain Current-Max (IDM) |
40 A
|
28 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
C BEND
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|