Part Details for SI7326DN-T1-E3 by Vishay Intertechnologies
Overview of SI7326DN-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI7326DN-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7326DN-T1-E3
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Avnet Americas | Trans MOSFET N-CH 30V 6.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7326DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.3105 / $0.3945 | Buy Now |
DISTI #
SI7326DN-T1-E3
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TTI | MOSFET 30V 10A 1.5W RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.2880 / $0.3150 | Buy Now |
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Chip1Cloud | MOSFET N-CH 30V 6.5A PPAK 1212-8 | 24900 |
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RFQ | |
DISTI #
SI7326DN-T1-E3
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EBV Elektronik | Trans MOSFET N-CH 30V 6.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7326DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Sense Electronic Company Limited | QFN | 1770 |
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RFQ |
Part Details for SI7326DN-T1-E3
SI7326DN-T1-E3 CAD Models
SI7326DN-T1-E3 Part Data Attributes
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SI7326DN-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7326DN-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 11 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 0.0195 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.5 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI7326DN-T1-E3
This table gives cross-reference parts and alternative options found for SI7326DN-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7326DN-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
EMB20N03VA | Power Field-Effect Transistor, 7A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-6 | Excelliance MOS Corporation | SI7326DN-T1-E3 vs EMB20N03VA |