Part Details for RFD16N06 by Intersil Corporation
Overview of RFD16N06 by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for RFD16N06
RFD16N06 CAD Models
RFD16N06 Part Data Attributes:
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RFD16N06
Intersil Corporation
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Datasheet
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RFD16N06
Intersil Corporation
16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 72 W | |
| Power Dissipation-Max (Abs) | 72 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 125 ns | |
| Turn-on Time-Max (ton) | 65 ns |
Alternate Parts for RFD16N06
This table gives cross-reference parts and alternative options found for RFD16N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD16N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| F10F6N | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | RFD16N06 vs F10F6N |
| NDP606BE | 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | RFD16N06 vs NDP606BE |
| STP9NK65Z | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STMicroelectronics | RFD16N06 vs STP9NK65Z |
| IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | RFD16N06 vs IXFH12N100F |
| IPD90N06S306ATMA1 | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | Infineon Technologies AG | RFD16N06 vs IPD90N06S306ATMA1 |
| FQA30N40 | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | RFD16N06 vs FQA30N40 |
| SSP10N60B | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | RFD16N06 vs SSP10N60B |
| BUK9614-30 | 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | RFD16N06 vs BUK9614-30 |
| FDP8878 | Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Fairchild Semiconductor Corporation | RFD16N06 vs FDP8878 |
| FQPF6N80 | Power Field-Effect Transistor, 3.3A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | RFD16N06 vs FQPF6N80 |