Datasheets
PMV213SN,215 by:

PMV213SN - N-channel TrenchMOS standard level FET@en-us TO-236 3-Pin

Part Details for PMV213SN,215 by Nexperia

Overview of PMV213SN,215 by Nexperia

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Applications Space Technology Environmental Monitoring Telecommunications

Price & Stock for PMV213SN,215

Part # Distributor Description Stock Price Buy
DISTI # 97K7752
Newark Mosfet, N-Ch, 100V, 1.9A, 2W, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Nexperia PMV213SN,215 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 14837
  • 1 $0.1710
  • 10 $0.1710
  • 25 $0.1710
  • 50 $0.1710
  • 100 $0.1710
  • 250 $0.1570
$0.1570 / $0.1710 Buy Now
DISTI # 86AK7702
Newark Mosfet, N Ch, 100V, 1.9A, Sot-23, Reel, Transistor Polarity:N Channel, Continuous Drain Current Id:1.9A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.213Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Nexperia PMV213SN,215 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 12000
  • 3,000 $0.1970
  • 6,000 $0.1910
  • 12,000 $0.1780
  • 18,000 $0.1760
  • 30,000 $0.1740
$0.1740 / $0.1970 Buy Now
DISTI # 1727-6294-1-ND
DigiKey MOSFET N-CH 100V 1.9A TO236AB Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 261783
In Stock
  • 1 $0.4100
  • 10 $0.3460
  • 100 $0.2408
  • 500 $0.1880
  • 1,000 $0.1630
  • 3,000 $0.1630
$0.1630 / $0.4100 Buy Now
DISTI # PMV213SN,215
Avnet Americas Trans MOSFET N-CH 100V 1.9A 3-Pin TO-236AB T/R - Tape and Reel (Alt: PMV213SN,215) RoHS: Not Compliant Min Qty: 12000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 12,000 $0.1302
  • 18,000 $0.1267
  • 30,000 $0.1232
  • 60,000 $0.1197
  • 120,000 $0.1162
  • 600,000 $0.1126
  • 1,200,000 $0.1091
$0.1091 / $0.1302 Buy Now
DISTI # PMV213SN,215
Avnet Americas Trans MOSFET N-CH 100V 1.9A 3-Pin TO-236AB T/R - Tape and Reel (Alt: PMV213SN,215) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 1 $0.1302
  • 10 $0.1267
  • 30 $0.1232
  • 50 $0.1197
  • 100 $0.1162
  • 250 $0.1126
  • 500 $0.1091
$0.1091 / $0.1302 Buy Now
DISTI # 771-PMV213SN215
Mouser Electronics MOSFET PMV213SN/SOT23/TO-236AB RoHS: Compliant 253271
  • 1 $0.4100
  • 10 $0.3260
  • 100 $0.2340
  • 500 $0.1880
  • 1,000 $0.1630
  • 3,000 $0.1510
  • 9,000 $0.1470
  • 24,000 $0.1330
  • 45,000 $0.1300
$0.1300 / $0.4100 Buy Now
DISTI # V72:2272_06540557
Arrow Electronics Trans MOSFET N-CH 100V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 437 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2218 Container: Cut Strips Americas - 9190
  • 437 $0.2288
  • 500 $0.1774
  • 1,000 $0.1525
  • 3,000 $0.1401
  • 6,000 $0.1297
$0.1297 / $0.2288 Buy Now
DISTI # A03:0893_00163199
Arrow Electronics Trans MOSFET N-CH 100V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2336 Asia - 3000
  • 3,000 $0.1228
  • 9,000 $0.1114
$0.1114 / $0.1228 Buy Now
DISTI # E21:3489_00163199
Arrow Electronics Trans MOSFET N-CH 100V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2325 Europe - 561
  • 1 $0.3775
  • 10 $0.3154
  • 100 $0.2175
  • 500 $0.1678
  • 1,000 $0.1441
  • 3,000 $0.1195
$0.1195 / $0.3775 Buy Now
Future Electronics N-Channel 100 V 250 mOhm 2 W Surface Mount TrenchMOS Standard Level FET SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 480000
Reel
  • 3,000 $0.1190
  • 6,000 $0.1160
  • 12,000 $0.1140
  • 15,000 $0.1140
  • 45,000 $0.1090
$0.1090 / $0.1190 Buy Now
Future Electronics N-Channel 100 V 250 mOhm 2 W Surface Mount TrenchMOS Standard Level FET SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 138000
Reel
  • 3,000 $0.1190
  • 6,000 $0.1160
  • 12,000 $0.1140
  • 15,000 $0.1140
  • 45,000 $0.1090
$0.1090 / $0.1190 Buy Now
Future Electronics N-Channel 100 V 250 mOhm 2 W Surface Mount TrenchMOS Standard Level FET SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 12000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 3,000 $0.1190
  • 6,000 $0.1160
  • 12,000 $0.1140
  • 15,000 $0.1140
  • 45,000 $0.1090
$0.1090 / $0.1190 Buy Now
DISTI # 61738033
Verical Trans MOSFET N-CH 100V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 437 Package Multiple: 1 Date Code: 2218 Americas - 9190
  • 437 $0.2288
  • 500 $0.1774
  • 1,000 $0.1525
  • 3,000 $0.1401
  • 6,000 $0.1297
$0.1297 / $0.2288 Buy Now
DISTI # 15908985
Verical Trans MOSFET N-CH 100V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Americas - 3000
  • 3,000 $0.1228
  • 9,000 $0.1114
$0.1114 / $0.1228 Buy Now
Rochester Electronics PMV213 - N-channel TrenchMOS standard level FET RoHS: Compliant Status: Active Min Qty: 1 188212
  • 1 $0.1270
  • 25 $0.1245
  • 100 $0.1194
  • 500 $0.1143
  • 1,000 $0.1080
$0.1080 / $0.1270 Buy Now
DISTI # PMV213SN.215
TME Transistor: N-MOSFET, unipolar, 100V, 1.2A, Idm: 7.6A, 2W Min Qty: 1 1754
  • 1 $0.2370
  • 10 $0.2240
  • 25 $0.2080
  • 100 $0.1900
  • 250 $0.1790
  • 500 $0.1670
  • 1,000 $0.1600
  • 3,000 $0.1550
$0.1550 / $0.2370 Buy Now
DISTI # PMV213SN,215
Avnet Asia Trans MOSFET N-CH 100V 1.9A 3-Pin TO-236AB T/R (Alt: PMV213SN,215) RoHS: Compliant Min Qty: 12000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days 0
  • 12,000 $0.1579
  • 24,000 $0.1558
  • 36,000 $0.1538
  • 60,000 $0.1519
  • 120,000 $0.1482
  • 300,000 $0.1446
  • 600,000 $0.1412
$0.1412 / $0.1579 Buy Now
DISTI # PMV213SN,215
Avnet Silica Trans MOSFET N-CH 100V 1.9A 3-Pin TO-236AB T/R (Alt: PMV213SN,215) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 168000
Buy Now
DISTI # C1S537100162032
Chip1Stop PMV213SN/SOT23/TO-236AB RoHS: Compliant pbFree: Yes Container: Cut Tape 1255
  • 5 $0.1520
  • 50 $0.1340
$0.1340 / $0.1520 Buy Now
CHIPMALL.COM LIMITED 100V 1.9A 280mW 250m��@10V,500mA 4V@1mA N Channel SOT-23 MOSFETs ROHS 4883
  • 5 $0.2635
  • 50 $0.2139
  • 150 $0.1927
  • 500 $0.1662
  • 3,000 $0.1545
  • 6,000 $0.1474
$0.1474 / $0.2635 Buy Now
DISTI # PMV213SN,215
EBV Elektronik Trans MOSFET N-CH 100V 1.9A 3-Pin TO-236AB T/R (Alt: PMV213SN,215) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 3000
Buy Now
New Advantage Corporation PMV213SN Series 100 V 250 mOhm 2 W N-Channel TrenchMOS Standard Level FET SOT-23 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 552000
  • 3,000 $0.1571
  • 552,000 $0.1467
$0.1467 / $0.1571 Buy Now

Part Details for PMV213SN,215

PMV213SN,215 CAD Models

PMV213SN,215 Part Data Attributes

PMV213SN,215 Nexperia
Buy Now Datasheet
Compare Parts:
PMV213SN,215 Nexperia PMV213SN - N-channel TrenchMOS standard level FET@en-us TO-236 3-Pin
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NEXPERIA
Part Package Code TO-236
Package Description SOT-23, 3 PIN
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 22 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 7.6 A
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PMV213SN,215

This table gives cross-reference parts and alternative options found for PMV213SN,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PMV213SN,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PMV213SN TRANSISTOR 1900 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors PMV213SN,215 vs PMV213SN
Part Number Description Manufacturer Compare
IRFL4310TRPBF Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier PMV213SN,215 vs IRFL4310TRPBF
PMT200EN TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal NXP Semiconductors PMV213SN,215 vs PMT200EN
PMT200EN Small Signal Field-Effect Transistor Nexperia PMV213SN,215 vs PMT200EN
IRLM120AL99Z Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation PMV213SN,215 vs IRLM120AL99Z
BSP372NH6327 Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG PMV213SN,215 vs BSP372NH6327
IRLM120AS62Z Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation PMV213SN,215 vs IRLM120AS62Z
IRFL110TRPBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier PMV213SN,215 vs IRFL110TRPBF
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies PMV213SN,215 vs IRFL110
BSP373NH6327 Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG PMV213SN,215 vs BSP373NH6327
BSP372L6327 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG PMV213SN,215 vs BSP372L6327

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