Part Details for BSP373NH6327 by Infineon Technologies AG
Overview of BSP373NH6327 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BSP373NH6327
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
ComSIT USA | OPTIMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2965 |
|
RFQ |
Part Details for BSP373NH6327
BSP373NH6327 CAD Models
BSP373NH6327 Part Data Attributes
|
|
BSP373NH6327
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSP373NH6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-223, 4 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 33 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 0.24 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 21 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Pulsed Drain Current-Max (IDM) | 7.3 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 53.2 ns | |
| Turn-on Time-Max (ton) | 15.81 ns |
Alternate Parts for BSP373NH6327
This table gives cross-reference parts and alternative options found for BSP373NH6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP373NH6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP373N | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP373NH6327 vs BSP373N |
| BSP373NH6327XTSA1 | Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP373NH6327 vs BSP373NH6327XTSA1 |