Part Details for IRFL110TRPBF by International Rectifier
Overview of IRFL110TRPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFL110TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA | 37 |
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$0.4500 / $0.5400 | Buy Now |
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DISTI #
SMC-IRFL110TRPBF
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Sensible Micro Corporation | XDIO R=IRFL110 SOT-223 100V 1.5 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2016+ Container: Tape & Reel | 1127 |
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$0.3443 / $0.3847 | RFQ |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 23 |
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$0.5000 / $0.7700 | Buy Now |
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Sense Electronic Company Limited | SOT223 | 1389 |
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RFQ |
Part Details for IRFL110TRPBF
IRFL110TRPBF CAD Models
IRFL110TRPBF Part Data Attributes
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IRFL110TRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFL110TRPBF
International Rectifier
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-261AA | |
| Package Description | SOT-223, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15 pF | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PSSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.1 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFL110TRPBF
This table gives cross-reference parts and alternative options found for IRFL110TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL110TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFL4310TRPBF | Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | International Rectifier | IRFL110TRPBF vs IRFL4310TRPBF |
| PMT200EN | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | NXP Semiconductors | IRFL110TRPBF vs PMT200EN |
| PMT200EN | Small Signal Field-Effect Transistor | Nexperia | IRFL110TRPBF vs PMT200EN |
| IRLM120AL99Z | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRFL110TRPBF vs IRLM120AL99Z |
| PMV213SN,215 | PMV213SN - N-channel TrenchMOS standard level FET@en-us TO-236 3-Pin | Nexperia | IRFL110TRPBF vs PMV213SN,215 |
| BSP372NH6327 | Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRFL110TRPBF vs BSP372NH6327 |
| IRLM120AS62Z | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRFL110TRPBF vs IRLM120AS62Z |
| IRFL110 | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | Vishay Intertechnologies | IRFL110TRPBF vs IRFL110 |
| BSP373NH6327 | Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRFL110TRPBF vs BSP373NH6327 |
| BSP372L6327 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRFL110TRPBF vs BSP372L6327 |