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PMT200EN by:

Small Signal Field-Effect Transistor

Part Details for PMT200EN by Nexperia

Overview of PMT200EN by Nexperia

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Part Details for PMT200EN

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PMT200EN Part Data Attributes

PMT200EN Nexperia
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PMT200EN Nexperia Small Signal Field-Effect Transistor
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Package Description SC-73, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.8 A
Drain-source On Resistance-Max 0.235 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PMT200EN

This table gives cross-reference parts and alternative options found for PMT200EN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PMT200EN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PMT200EN,135 100 V N-channel Trench MOSFET SC-73 4-Pin NXP Semiconductors PMT200EN vs PMT200EN,135
BSP372NH6327 Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG PMT200EN vs BSP372NH6327
Part Number Description Manufacturer Compare
IRFL4310TRPBF Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier PMT200EN vs IRFL4310TRPBF
PMT200EN TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal NXP Semiconductors PMT200EN vs PMT200EN
IRLM120AL99Z Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation PMT200EN vs IRLM120AL99Z
PMV213SN,215 PMV213SN - N-channel TrenchMOS standard level FET@en-us TO-236 3-Pin Nexperia PMT200EN vs PMV213SN,215
BSP372NH6327 Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG PMT200EN vs BSP372NH6327
IRLM120AS62Z Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation PMT200EN vs IRLM120AS62Z
IRFL110TRPBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier PMT200EN vs IRFL110TRPBF
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies PMT200EN vs IRFL110
BSP373NH6327 Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG PMT200EN vs BSP373NH6327
BSP372L6327 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG PMT200EN vs BSP372L6327

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