Part Details for NT5DS32M8AT-75B by Nanya Technology Corporation
Overview of NT5DS32M8AT-75B by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Part Details for NT5DS32M8AT-75B
NT5DS32M8AT-75B CAD Models
NT5DS32M8AT-75B Part Data Attributes:
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NT5DS32M8AT-75B
Nanya Technology Corporation
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Datasheet
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NT5DS32M8AT-75B
Nanya Technology Corporation
DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.025 A | |
| Supply Current-Max | 0.3 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for NT5DS32M8AT-75B
This table gives cross-reference parts and alternative options found for NT5DS32M8AT-75B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5DS32M8AT-75B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| KM48L32331AT-GY | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66 | Samsung Semiconductor | NT5DS32M8AT-75B vs KM48L32331AT-GY |
| KM48L32331AT-FY | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66 | Samsung Semiconductor | NT5DS32M8AT-75B vs KM48L32331AT-FY |
| V58C2256804SBT75 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 | Mosel Vitelic Corporation | NT5DS32M8AT-75B vs V58C2256804SBT75 |