Datasheets
KM48L32331AT-FY by: Samsung Semiconductor

DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66

Part Details for KM48L32331AT-FY by Samsung Semiconductor

Overview of KM48L32331AT-FY by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for KM48L32331AT-FY

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KM48L32331AT-FY Part Data Attributes:

KM48L32331AT-FY Samsung Semiconductor
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KM48L32331AT-FY Samsung Semiconductor DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSSOP2
Package Description TSOP2, TSSOP66,.46
Pin Count 66
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e0
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.025 A
Supply Current-Max 0.2 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for KM48L32331AT-FY

This table gives cross-reference parts and alternative options found for KM48L32331AT-FY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM48L32331AT-FY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
KM48L32331AT-GY DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66 Samsung Semiconductor KM48L32331AT-FY vs KM48L32331AT-GY
NT5DS32M8AT-75B DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Nanya Technology Corporation KM48L32331AT-FY vs NT5DS32M8AT-75B
Part Number Description Manufacturer Compare
IBMN625805GT3B-75N DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 IBM KM48L32331AT-FY vs IBMN625805GT3B-75N
MT46V32M8TC-5B:G DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc KM48L32331AT-FY vs MT46V32M8TC-5B:G
VG37256802AT-75 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Vanguard International Semiconductor Corporation KM48L32331AT-FY vs VG37256802AT-75
V58C2256804SAT-7 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc KM48L32331AT-FY vs V58C2256804SAT-7
MT46V32M8TG-75DM:C DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc KM48L32331AT-FY vs MT46V32M8TG-75DM:C
MT46V32M8FG-75 DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 8 X 14 MM, PLASTIC, FBGA-60 Micron Technology Inc KM48L32331AT-FY vs MT46V32M8FG-75
MT46V32M8P-75IT:G DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 Micron Technology Inc KM48L32331AT-FY vs MT46V32M8P-75IT:G
MT46V32M8FJ-75Z DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 16 X 9 MM, PLASTIC, FBGA-60 Micron Technology Inc KM48L32331AT-FY vs MT46V32M8FJ-75Z
MT46V32M8TG-75IT DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc KM48L32331AT-FY vs MT46V32M8TG-75IT
MT46V32M8TG-75ZL:C DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc KM48L32331AT-FY vs MT46V32M8TG-75ZL:C

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