Part Details for MT8HTF12864HDY-40EA3 by Micron Technology Inc
Overview of MT8HTF12864HDY-40EA3 by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for MT8HTF12864HDY-40EA3
MT8HTF12864HDY-40EA3 CAD Models
MT8HTF12864HDY-40EA3 Part Data Attributes:
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MT8HTF12864HDY-40EA3
Micron Technology Inc
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Datasheet
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MT8HTF12864HDY-40EA3
Micron Technology Inc
DDR DRAM Module, 128MX64, 0.6ns, CMOS, PDMA200
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | DIMM, DIMM200,24 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Time-Max | 0.6 ns | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDMA-N200 | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Terminals | 200 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Standby Current-Max | 0.04 A | |
| Supply Current-Max | 1.92 mA | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.6 mm | |
| Terminal Position | DUAL |
Alternate Parts for MT8HTF12864HDY-40EA3
This table gives cross-reference parts and alternative options found for MT8HTF12864HDY-40EA3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT8HTF12864HDY-40EA3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYS64D128021GBDL-5-B | DDR DRAM Module, 128MX64, 0.5ns, CMOS, SODIMM-200 | Infineon Technologies AG | MT8HTF12864HDY-40EA3 vs HYS64D128021GBDL-5-B |
| MT16HTF12864HY-40EXX | DDR DRAM Module, 128MX64, 0.6ns, CMOS, LEAD FREE, MO-224, SODIMM-200 | Micron Technology Inc | MT8HTF12864HDY-40EA3 vs MT16HTF12864HY-40EXX |
| M470L2923BV0-CB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT8HTF12864HDY-40EA3 vs M470L2923BV0-CB3 |
| MT8VDDT12864HDG-26AXX | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Micron Technology Inc | MT8HTF12864HDY-40EA3 vs MT8VDDT12864HDG-26AXX |
| HYMD512M646BF8-J | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | MT8HTF12864HDY-40EA3 vs HYMD512M646BF8-J |
| WV3EG265M64EFSU335D4-S | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | Microsemi Corporation | MT8HTF12864HDY-40EA3 vs WV3EG265M64EFSU335D4-S |
| HYMD512M646BLFP8-J | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | SK Hynix Inc | MT8HTF12864HDY-40EA3 vs HYMD512M646BLFP8-J |
| HYMD512M646BFS8-K | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | MT8HTF12864HDY-40EA3 vs HYMD512M646BFS8-K |
| W3EG264M64EFSU265D4IS | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Microsemi Corporation | MT8HTF12864HDY-40EA3 vs W3EG264M64EFSU265D4IS |
| VR5DU286418FBP | DDR DRAM Module, 128MX64, 0.6ns, CMOS, SODIMM-200 | Viking Technology | MT8HTF12864HDY-40EA3 vs VR5DU286418FBP |