Part Details for MT16HTF12864HY-40EXX by Micron Technology Inc
Overview of MT16HTF12864HY-40EXX by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MT16HTF12864HY-40EXX
MT16HTF12864HY-40EXX CAD Models
MT16HTF12864HY-40EXX Part Data Attributes
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MT16HTF12864HY-40EXX
Micron Technology Inc
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Datasheet
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MT16HTF12864HY-40EXX
Micron Technology Inc
DDR DRAM Module, 128MX64, 0.6ns, CMOS, LEAD FREE, MO-224, SODIMM-200
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | SODIMM | |
Package Description | DIMM, | |
Pin Count | 200 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 0.6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-XZMA-N200 | |
JESD-609 Code | e4 | |
Length | 67.6 mm | |
Memory Density | 8589934592 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 200 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 128MX64 | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Seated Height-Max | 30.15 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | ZIG-ZAG |
Alternate Parts for MT16HTF12864HY-40EXX
This table gives cross-reference parts and alternative options found for MT16HTF12864HY-40EXX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16HTF12864HY-40EXX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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W3EG64128S202BD4 | DDR DRAM Module, 128MX64, CMOS, SODIMM-200 | Microsemi Corporation | MT16HTF12864HY-40EXX vs W3EG64128S202BD4 |
MT16VDDF12864HIY-335XX | DDR DRAM Module, 128MX64, CMOS, LEAD FREE, SODIMM-200 | Micron Technology Inc | MT16HTF12864HY-40EXX vs MT16VDDF12864HIY-335XX |
M470L2923BV0-CB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT16HTF12864HY-40EXX vs M470L2923BV0-CB3 |
HYS64D128021GBDL-6-B | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | Infineon Technologies AG | MT16HTF12864HY-40EXX vs HYS64D128021GBDL-6-B |
HYMD512M646BFS8-K | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | MT16HTF12864HY-40EXX vs HYMD512M646BFS8-K |
W3EG64128S265AD4 | DDR DRAM Module, 128MX64, CMOS, SODIMM-200 | Microsemi Corporation | MT16HTF12864HY-40EXX vs W3EG64128S265AD4 |
M470L2923BN0-CB0 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Samsung Semiconductor | MT16HTF12864HY-40EXX vs M470L2923BN0-CB0 |
M470T2864DZ3-CD5 | Synchronous DRAM Module, 128MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT16HTF12864HY-40EXX vs M470T2864DZ3-CD5 |
HYS64T128021HDL-3.7-B | DDR DRAM Module, 128MX64, 0.5ns, CMOS, GREEN, SODIMM-200 | Infineon Technologies AG | MT16HTF12864HY-40EXX vs HYS64T128021HDL-3.7-B |
W3EG264M64EFSU265D4S | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Microsemi Corporation | MT16HTF12864HY-40EXX vs W3EG264M64EFSU265D4S |