Part Details for WV3EG265M64EFSU335D4-S by Microsemi Corporation
Overview of WV3EG265M64EFSU335D4-S by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for WV3EG265M64EFSU335D4-S
WV3EG265M64EFSU335D4-S CAD Models
WV3EG265M64EFSU335D4-S Part Data Attributes
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WV3EG265M64EFSU335D4-S
Microsemi Corporation
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Datasheet
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WV3EG265M64EFSU335D4-S
Microsemi Corporation
DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | MODULE | |
| Package Description | DIMM, | |
| Pin Count | 200 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N200 | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for WV3EG265M64EFSU335D4-S
This table gives cross-reference parts and alternative options found for WV3EG265M64EFSU335D4-S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of WV3EG265M64EFSU335D4-S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W3EG64128S202BD4 | DDR DRAM Module, 128MX64, CMOS, SODIMM-200 | Microsemi Corporation | WV3EG265M64EFSU335D4-S vs W3EG64128S202BD4 |
| MT16VDDF12864HIY-335XX | DDR DRAM Module, 128MX64, CMOS, LEAD FREE, SODIMM-200 | Micron Technology Inc | WV3EG265M64EFSU335D4-S vs MT16VDDF12864HIY-335XX |
| M470L2923BV0-CB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | WV3EG265M64EFSU335D4-S vs M470L2923BV0-CB3 |
| HYS64D128021GBDL-6-B | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | Infineon Technologies AG | WV3EG265M64EFSU335D4-S vs HYS64D128021GBDL-6-B |
| HYMD512M646BFS8-K | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | WV3EG265M64EFSU335D4-S vs HYMD512M646BFS8-K |
| W3EG64128S265AD4 | DDR DRAM Module, 128MX64, CMOS, SODIMM-200 | Microsemi Corporation | WV3EG265M64EFSU335D4-S vs W3EG64128S265AD4 |
| M470L2923BN0-CB0 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Samsung Semiconductor | WV3EG265M64EFSU335D4-S vs M470L2923BN0-CB0 |
| M470T2864DZ3-CD5 | Synchronous DRAM Module, 128MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | WV3EG265M64EFSU335D4-S vs M470T2864DZ3-CD5 |
| HYS64T128021HDL-3.7-B | DDR DRAM Module, 128MX64, 0.5ns, CMOS, GREEN, SODIMM-200 | Infineon Technologies AG | WV3EG265M64EFSU335D4-S vs HYS64T128021HDL-3.7-B |
| W3EG264M64EFSU265D4S | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Microsemi Corporation | WV3EG265M64EFSU335D4-S vs W3EG264M64EFSU265D4S |