Datasheets
MMDF3N03HD by:

2.8A, 30V, 0.09ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8

Part Details for MMDF3N03HD by Motorola Mobility LLC

Overview of MMDF3N03HD by Motorola Mobility LLC

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Applications Consumer Electronics Space Technology Audio and Video Systems Renewable Energy Electronic Manufacturing Automotive

Part Details for MMDF3N03HD

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MMDF3N03HD Part Data Attributes:

MMDF3N03HD Motorola Mobility LLC
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MMDF3N03HD Motorola Mobility LLC 2.8A, 30V, 0.09ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Manufacturer Package Code CASE 751-05
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 324 mJ
Configuration SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.8 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MMDF3N03HD

This table gives cross-reference parts and alternative options found for MMDF3N03HD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF3N03HD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RF1K4908696 Power Field-Effect Transistor, 3.5A I(D), 30V, 0.132ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Fairchild Semiconductor Corporation MMDF3N03HD vs RF1K4908696
Part Number Description Manufacturer Compare
IRF7314TRPBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE PACKAGE-8 International Rectifier MMDF3N03HD vs IRF7314TRPBF
FDS4935A Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation MMDF3N03HD vs FDS4935A
FDS9926A Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation MMDF3N03HD vs FDS9926A
IRF7101PBF Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 International Rectifier MMDF3N03HD vs IRF7101PBF
MMDF2P01HD Power Field-Effect Transistor, 2A I(D), 12V, 0.2ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMDF3N03HD vs MMDF2P01HD
IRF7404TRPBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier MMDF3N03HD vs IRF7404TRPBF
IRF7314PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMDF3N03HD vs IRF7314PBF
IRF7404PBF Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMDF3N03HD vs IRF7404PBF
IRF7401PBF Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMDF3N03HD vs IRF7401PBF
IRF7403TRPBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier MMDF3N03HD vs IRF7403TRPBF

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