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Part Details for MJD112T4G by onsemi
Overview of MJD112T4G by onsemi
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for MJD112T4G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
81Y6792
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Newark | Transistor, Bipol, Npn, 100V, To-252Aa-3, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:100V, Transition Frequency Ft:25Mhz, Power Dissipation Pd:20W, Dc Collector Current:2A, Dc Current Gain Hfe:200Hfe, Transistor Caserohs Compliant: Yes |Onsemi MJD112T4G Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 8985 |
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$0.3860 | Buy Now |
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DISTI #
10N9468
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Newark | Darlington Transistor, Npn, 100V, D-Pak, Transistor Polarity:Npn, No. Of Pins:3Pins, Transistor Mounting:Surface Mount, Operating Temperature Max:150°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Onsemi MJD112T4G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2500 |
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$0.3600 | Buy Now |
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DISTI #
45J1479
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Newark | Darlington Transistor, Npn, 100V, D-Pak, Full Reel, Transistor Polarity:Npn, No. Of Pins:3Pins, Transistor Mounting:Surface Mount, Operating Temperature Max:150°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Onsemi MJD112T4G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2680 / $0.2720 | Buy Now |
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DISTI #
MJD112T4GOSCT-ND
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DigiKey | TRANS NPN DARL 100V 2A DPAK Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2106 / $0.6400 | Buy Now |
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DISTI #
MJD112T4G
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Avnet Americas | Trans Darlington NPN 100V 2A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: MJD112T4G) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.2089 / $0.2494 | Buy Now |
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DISTI #
MJD112T4G
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Avnet Americas | Trans Darlington NPN 100V 2A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: MJD112T4G) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.2089 / $0.2494 | Buy Now |
|
DISTI #
MJD112T4G
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Avnet Americas | Trans Darlington NPN 100V 2A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: MJD112T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.2089 / $0.2494 | Buy Now |
|
DISTI #
863-MJD112T4G
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Mouser Electronics | Darlington Transistors 2A 100V Bipolar Power NPN RoHS: Compliant | 23174 |
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$0.2410 / $0.6600 | Buy Now |
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Future Electronics | MJD Series 100 V 2 A NPN Complementary Darlington Power Transistor - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 65000Reel |
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$0.2100 / $0.2200 | Buy Now |
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Future Electronics | MJD Series 100 V 2 A NPN Complementary Darlington Power Transistor - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2100 / $0.2200 | Buy Now |
Part Details for MJD112T4G
MJD112T4G CAD Models
MJD112T4G Part Data Attributes:
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MJD112T4G
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD112T4G
onsemi
2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 50 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 200 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 25 MHz |
Alternate Parts for MJD112T4G
This table gives cross-reference parts and alternative options found for MJD112T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD112T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CJD112 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Central Semiconductor Corp | MJD112T4G vs CJD112 |
| MJD112RLG | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL | onsemi | MJD112T4G vs MJD112RLG |
| CJD112TR13 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | MJD112T4G vs CJD112TR13 |
| MJD112-T1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | MJD112T4G vs MJD112-T1 |
| MJD112G | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | onsemi | MJD112T4G vs MJD112G |
| MJD112 | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | onsemi | MJD112T4G vs MJD112 |
| MJD112T4 | Low voltage NPN power Darlington transistor | STMicroelectronics | MJD112T4G vs MJD112T4 |
| MJD112 | 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 | STMicroelectronics | MJD112T4G vs MJD112 |
| MJD112T4 | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | MJD112T4G vs MJD112T4 |