Part Details for MG100Q2YS11 by Toshiba America Electronic Components
Overview of MG100Q2YS11 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MG100Q2YS11
MG100Q2YS11 CAD Models
MG100Q2YS11 Part Data Attributes:
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MG100Q2YS11
Toshiba America Electronic Components
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Datasheet
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MG100Q2YS11
Toshiba America Electronic Components
TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 1000 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 800 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.7 V |
Alternate Parts for MG100Q2YS11
This table gives cross-reference parts and alternative options found for MG100Q2YS11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG100Q2YS11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2MBI150NC-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | MG100Q2YS11 vs 2MBI150NC-120 |
| MG300Q1US2 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100Q2YS11 vs MG300Q1US2 |
| MG500Q1US2 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100Q2YS11 vs MG500Q1US2 |
| MG300Q1US11 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100Q2YS11 vs MG300Q1US11 |
| MG600Q1US51 | TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F3A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100Q2YS11 vs MG600Q1US51 |
| MG300N1US1 | TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100Q2YS11 vs MG300N1US1 |
| 1MBI400S-120 | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG100Q2YS11 vs 1MBI400S-120 |
| MG150Q2YS1 | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100Q2YS11 vs MG150Q2YS1 |
| 2MBI100S-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | MG100Q2YS11 vs 2MBI100S-120 |
| MG300Q1US41 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100Q2YS11 vs MG300Q1US41 |