Datasheets
2MBI150NC-120 by: Fuji Electric Co Ltd

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN

Part Details for 2MBI150NC-120 by Fuji Electric Co Ltd

Overview of 2MBI150NC-120 by Fuji Electric Co Ltd

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Part Details for 2MBI150NC-120

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2MBI150NC-120 Part Data Attributes

2MBI150NC-120 Fuji Electric Co Ltd
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2MBI150NC-120 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer COLLMER SEMICONDUCTOR INC
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW SATURATION VOLTAGE
Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 850 ns
Turn-on Time-Nom (ton) 650 ns

Alternate Parts for 2MBI150NC-120

This table gives cross-reference parts and alternative options found for 2MBI150NC-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2MBI150NC-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM100GB120DN2 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN Infineon Technologies AG 2MBI150NC-120 vs BSM100GB120DN2
CM150DY-24T Insulated Gate Bipolar Transistor, Mitsubishi Electric 2MBI150NC-120 vs CM150DY-24T
1MBI200SA-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Fuji Electric Co Ltd 2MBI150NC-120 vs 1MBI200SA-120
MG600Q1US59A Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Mitsubishi Electric 2MBI150NC-120 vs MG600Q1US59A
MG600Q1US65H TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150NC-120 vs MG600Q1US65H
2MBI150SC-120 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN Fuji Electric Co Ltd 2MBI150NC-120 vs 2MBI150SC-120
MII150-12A4 Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Littelfuse Inc 2MBI150NC-120 vs MII150-12A4
MG100Q2YS50A TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150NC-120 vs MG100Q2YS50A
APTGT200U120D4 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 Microsemi Corporation 2MBI150NC-120 vs APTGT200U120D4
FZ400R12KS4 Insulated Gate Bipolar Transistor, 510A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG 2MBI150NC-120 vs FZ400R12KS4

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