Parametric results for: MG100Q2YS11 under IGBTs

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Collector Current-Max (IC) (1)

100 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

1.2 kV 1

1 hit Apply

Configuration (1)

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 1

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1 µs 1

1 hit Apply

20 V 1

1 hit Apply

R-PUFM-X7 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

2 1

1 hit Apply

Number of Terminals (1)

7 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

800 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply