Part Details for MG300N1US1 by Toshiba America Electronic Components
Overview of MG300N1US1 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MG300N1US1
MG300N1US1 CAD Models
MG300N1US1 Part Data Attributes
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MG300N1US1
Toshiba America Electronic Components
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Datasheet
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MG300N1US1
Toshiba America Electronic Components
TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-PUFM-X4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH SPEED SWITCHING | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 300 A | |
Collector-Emitter Voltage-Max | 1000 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1400 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1300 ns | |
Turn-on Time-Nom (ton) | 1200 ns | |
VCEsat-Max | 5 V |
Alternate Parts for MG300N1US1
This table gives cross-reference parts and alternative options found for MG300N1US1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG300N1US1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSM100GB120DN2 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN | Infineon Technologies AG | MG300N1US1 vs BSM100GB120DN2 |
CM150DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | MG300N1US1 vs CM150DY-24T |
1MBI200SA-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG300N1US1 vs 1MBI200SA-120 |
MG600Q1US59A | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | MG300N1US1 vs MG600Q1US59A |
MG600Q1US65H | TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300N1US1 vs MG600Q1US65H |
2MBI150SC-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | MG300N1US1 vs 2MBI150SC-120 |
MII150-12A4 | Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | MG300N1US1 vs MII150-12A4 |
MG100Q2YS50A | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300N1US1 vs MG100Q2YS50A |
APTGT200U120D4 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 | Microsemi Corporation | MG300N1US1 vs APTGT200U120D4 |
FZ400R12KS4 | Insulated Gate Bipolar Transistor, 510A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | MG300N1US1 vs FZ400R12KS4 |