Part Details for JANTX2N6802U by International Rectifier
Overview of JANTX2N6802U by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for JANTX2N6802U
JANTX2N6802U CAD Models
JANTX2N6802U Part Data Attributes:
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JANTX2N6802U
International Rectifier
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Datasheet
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JANTX2N6802U
International Rectifier
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | LCC | |
Package Description | HERMETIC SEALED, LCC-18 | |
Pin Count | 18 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 0.31 mJ | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 1.725 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CQCC-N15 | |
Number of Elements | 1 | |
Number of Terminals | 15 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 11 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/557 | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6802U
This table gives cross-reference parts and alternative options found for JANTX2N6802U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6802U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFE430 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTX2N6802U vs IRFE430 |
IRFE430E4 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTX2N6802U vs IRFE430E4 |
IRFE430-JQR-BE4 | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6802U vs IRFE430-JQR-BE4 |
IRFE430E4 | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6802U vs IRFE430E4 |
IRFE430 | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6802U vs IRFE430 |
JANTXV2N6802U | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JANTX2N6802U vs JANTXV2N6802U |
IRFE430-JQR-B | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6802U vs IRFE430-JQR-B |
IRFE430-JQR-B | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTX2N6802U vs IRFE430-JQR-B |
IRFE430 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | International Rectifier | JANTX2N6802U vs IRFE430 |