Datasheets
IRFE430E4 by:

2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15

Part Details for IRFE430E4 by TT Electronics Power and Hybrid / Semelab Limited

Overview of IRFE430E4 by TT Electronics Power and Hybrid / Semelab Limited

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Part Details for IRFE430E4

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IRFE430E4 Part Data Attributes

IRFE430E4 TT Electronics Power and Hybrid / Semelab Limited
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IRFE430E4 TT Electronics Power and Hybrid / Semelab Limited 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMELAB LTD
Package Description CHIP CARRIER, R-CQCC-N15
Pin Count 15
Reach Compliance Code compliant
ECCN Code EAR99
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 1.725 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CQCC-N15
JESD-609 Code e4
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position QUAD
Transistor Element Material SILICON

Alternate Parts for IRFE430E4

This table gives cross-reference parts and alternative options found for IRFE430E4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE430E4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFE430-JQR-B Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430E4 vs IRFE430-JQR-B
IRFE430-JQR-BE4 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430E4 vs IRFE430-JQR-BE4
IRFE430 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430E4 vs IRFE430
IRFE430PBF Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE430E4 vs IRFE430PBF
JANTX2N6802U Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE430E4 vs JANTX2N6802U
IRFE430 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE430E4 vs IRFE430
IRFE430E4 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430E4 vs IRFE430E4
Part Number Description Manufacturer Compare
IRFE430E4 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430E4 vs IRFE430E4
IRFE430-JQR-BE4 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE430E4 vs IRFE430-JQR-BE4
IRFE430PBF Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE430E4 vs IRFE430PBF
IRFE430 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430E4 vs IRFE430
JANTX2N6802U Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE430E4 vs JANTX2N6802U
IRFE430 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE430E4 vs IRFE430
IRFE430-JQR-BE4 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430E4 vs IRFE430-JQR-BE4
IRFE430-JQR-B Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430E4 vs IRFE430-JQR-B
JANTXV2N6802U Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Defense Logistics Agency IRFE430E4 vs JANTXV2N6802U

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