Datasheets
IRFE430 by:

Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15

Part Details for IRFE430 by TT Electronics Resistors

Overview of IRFE430 by TT Electronics Resistors

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Part Details for IRFE430

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IRFE430 Part Data Attributes

IRFE430 TT Electronics Resistors
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IRFE430 TT Electronics Resistors Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TT ELECTRONICS PLC
Package Description CHIP CARRIER, R-CQCC-N15
Reach Compliance Code compliant
ECCN Code EAR99
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 1.725 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CQCC-N15
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IRFE430

This table gives cross-reference parts and alternative options found for IRFE430. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE430, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFE430E4 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430 vs IRFE430E4
JANTX2N6802U Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE430 vs JANTX2N6802U
IRFE430 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE430 vs IRFE430
IRFE430-JQR-B 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE430 vs IRFE430-JQR-B
IRFE430-JQR-BE4 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE430 vs IRFE430-JQR-BE4
IRFE430 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE430 vs IRFE430
Part Number Description Manufacturer Compare
JANTXV2N6802U Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE430 vs JANTXV2N6802U
IRFE430 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE430 vs IRFE430
JANTX2N6802U Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE430 vs JANTX2N6802U
IRFE430 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE430 vs IRFE430
IRFE430-JQR-BE4 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE430 vs IRFE430-JQR-BE4
IRFE430E4 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE430 vs IRFE430E4

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